超高像素密度的白色量子点发光器件  

White Quantum Dot Light⁃emitting Devices with Ultrahigh Pixel Density

作　　者：郑文晨 郑悦婷 白洁玉 赵等临 孟汀涛 徐中玮 赵浩兵 郭太良[1] 李福山[1] ZHENG Wenchen;ZHENG Yueting;BAI Jieyu;ZHAO Denglin;MENG Tingtao;XU Zhong-wei;ZHAO Haobing;GUO Tailiang;LI Fushan(College of Physics and Information Engineering,Fuzhou University,Fuzhou 350108,CHN)

机构地区：[1]福州大学物理与信息工程学院,福州350108

出　　处：《光电子技术》2023年第4期287-292,304,共7页Optoelectronic Technology

基　　金：国家重点研发计划项目(2022YFB3606500)。

摘　　要：利用LB(Langmuir-Blodgett)转移印刷技术成功制备了分辨率为12 700 ppi的高性能QLED(Quantum Dot Light-emitting Devices,量子点发光二极管)。通过该方法制备的超高分辨率红色QLED器件的EQE为15.27%。此外还成功制备了EQE为4.9%的超高分辨率白色QLED器件。本工作为下一代高分辨率显示器的实现提供了一种思路。With the continuous development of near-eye display technology,the next generation display technology has more stringent requirements on resolution.In this work,a Langmuir-Blodgett transfer printing(LB-TP)technology was used to realize high-performance quantum-dot light-emit-ting diodes(QLEDs)with a resolution of 12700 pixels per inch(ppi).The external quantum efficien-cy(EQE)of the red QLED device prepared by this method was as high as 15.27%.In addition,a white ultra-high resolution QLED device with an EQE of 4.9%was successfully realized.This work could provide a route for manufacturing of the next generation high resolution display.

关 键 词：转移印刷 高分辨率 量子点发光二极管 

分 类 号：TN383[电子电信—物理电子学]