多芯片模块互连可靠性预测分析  

Interconnect Reliability Prediction and Analysis for Multi-Chip Module

作　　者：赵鹏飞 林倩 Zhao Pengfei;Lin Qian(School of Physics and Electronic Information Engineering,Qinghai Minzu University,Xining 810007,China)

机构地区：[1]青海民族大学物理与电子信息工程学院,西宁810007

出　　处：《半导体技术》2023年第12期1129-1136,共8页Semiconductor Technology

基　　金：国家自然科学基金资助项目(62161046);青海省西部之光科技创新能力提升西部青年学者专项(1_14)。

摘　　要：为了预测多芯片模块(MCM)的互连短路和断路失效,采用ANSYS参数化设计语言(APDL)实现了由2个Si开关芯片和2个GaAs低噪声放大器芯片组成的高集成度双通道MCM的3D自动建模。对不同工作条件下的MCM进行了热传导分析。基于原子通量散度(AFD)原理,采用有限元分析(FEA)法对该MCM在不同工作温度和电压下的互连可靠性进行了分析,得到该MCM在不同工作条件下的AFD分布、温度分布,以及温度、AFD与工作电压的关系曲线。结果表明,芯片和塑封材料的温度随着工作电压的升高而增加,且该MCM的互连可靠性随着温度和工作电压的增加而显著降低。研究结果可为MCM的版图设计提供参考,以保障其互连可靠性。In order to predict interconnect short circuit and open circuit failures of multi-chip modules(MCMs),ANSYS parametric design language(APDL)was used to realize the three-dimensional automatic modeling for a highly integrated dual-channel MCM consisting of two Si switch chips and two GaAs low noise amplifier chips.The heat conduction analysis of the MCM under different working conditions was carried out.Based on the theory of atomic flux divergence(AFD),the interconnect reliability for the MCM under different operating temperatures and voltages was analyzed by the finite element analysis(FEA)method.AFD distribution and temperature distribution of the MCM under different working conditions were obtained,as well as the relationship curves of temperature,AFD and operating voltages.The results show that the temperature of chips and plastic sealing material increases with the increase of the operating voltage.Meanwhile,the interconnect reliability decreases dramatically with the rising of temperature and operating voltage.The research results can provide reference for the layout design for MCMs to ensure the interconnect reliability.

关 键 词：多芯片模块(MCM) 温度可靠性 电迁移 ANSYS参数化设计语言(APDL) 自动建模 有限元分析(FEA) 

分 类 号：TN405.97[电子电信—微电子学与固体电子学] TN406