MHz高压脉冲电源的研究  

Research on MHz High Voltage Pulse Power Supply

作　　者：丁凯 饶俊峰 DING Kai;RAO Junfeng(School of Mechanical Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China;Suzhou Institute of Medical Engineering and Technology,Chinese Academy of Sciences,Suzhou 215163,China)

机构地区：[1]上海理工大学机械工程学院,上海200093 [2]中国科学院苏州医学工程技术研究所,江苏苏州215163

出　　处：《电子科技》2024年第2期69-75,共7页Electronic Science and Technology

基　　金：上海市青年科技英才扬帆计划(20YF1431100)。

摘　　要：针对均匀放电、生物医疗等高频纳秒脉冲的应用需求,文中设计了一款基于射频MOSFET(Metal Oxide-Semiconductor Field Effect Transistor)的高重频高压脉冲电源。脉冲电源的控制信号由FPGA(Field Programmable Gate Array)提供,并通过光纤进行传输,经驱动芯片放大后同步触发每一级放电管。驱动芯片采用电源模块隔离供电的方式来提供不同的地电位。放电管采用RCD(Residual Current Device)吸收电路来改善开关时刻的瞬时工况。分析和研究了最后一级隔离电感对放电管电压波形、负载电压波形的影响,并对Marx电路做出了改进。实验结果表明,在1 kΩ纯阻性负载上,该电源可在1 MHz重复频率下输出上升沿为40 ns、半高宽为100 ns以及电压幅值为1.1 kV的纳秒脉冲。实验验证表明该电源能够在高频高压状态下稳定工作,满足设计要求。In view of the application requirements of high frequency nanosecond pulse such as uniform discharge and biomedical,a high frequency and high voltage pulse power supply based on radio frequency Metal Oxide-Semiconductor Field Effect Transistor(MOSFET)is designed.The control signal of the pulse power supply is provided by Field Programmable Gate Array(FPGA)and transmitted through optical fiber.After amplification by the driver chip,each stage of the discharge tube is triggered synchronously.The drive chip adopts power module to provide different ground potential.The discharge tube adopts Residual Current Device(RCD)absorbing circuit to improve the instantaneous working condition at the opening and closing time.The main analysis and research is the effect of the last stage isolation inductance on the voltage waveform of discharge tube and load voltage waveform,and the Marx circuit is improved.The experimental results show that the power supply can output nanosecond pulses with rising edge of 40 ns,half-height width of 100 ns and voltage amplitude of 1.1 kV at 1 MHz repetition rate on 1 kΩresistance load.It is verified that the power supply can work reliably in high frequency and high voltage state and meet the design requirements.

关 键 词：MARX发生器 射频MOSFET 脉冲电源 纳秒脉冲 隔离电感 FPGA 脉冲功率技术 1 MHz重频 

分 类 号：TN782[电子电信—电路与系统]