检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:张晓帆[1] 默江辉[1,2] 高永辉 倪涛[1] 余若祺[1] 斛彦生[1,2] 徐守利[1] Zhang Xiaofan;Mo Jianghui;Gao Yonghui;Ni Tao;Yu Ruoqi;Hu Yansheng;Xu Shouli(The 13th Research Institute,CETC,Shijiazhuang 050051,China;National Key Laboratory of Solid-State Microwave Devices and Circuits,Shijiazhuang 050051,China)
机构地区:[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]固态微波器件与电路全国重点实验室,石家庄050051
出 处:《半导体技术》2024年第1期45-49,共5页Semiconductor Technology
基 金:国家自然科学基金(U2241220)。
摘 要:为了满足VHF频段对高功率放大器小型化的需求,设计并制备了一款基于05μm GaN高电子迁移率晶体管(HEMT)工艺的VHF频段小型化千瓦级功率放大器。通过采用多节微带电容网络和高介电常数的印制电路板(PCB)实现了末级功率放大器匹配电路的小型化;以高通滤波器作为级间匹配电路,在减小电路尺寸的同时,提高了链路增益;采用混合集成工艺,实现了电源调制器、前级驱动功率放大器和末级功率放大器等各单元的小型化高密度集成。测试结果表明,在024~030 GHz频带内,该功率放大器的工作电压为50 V,工作脉宽为100μs,在占空比10%、输入功率10 dBm的工作条件下,带内输出功率大于1000 W,功率附加效率约为60%~69%,功率增益大于50 dB,功放体积为46 mm×30 mm×6 mm。In order to meet the miniaturization requirements for VHF-band high power amplifier,a VHF-band miniaturized kilowatt level power amplifier was designed and frabricated based on 05μm GaN high electron mobility transistor(HEMT)process.The miniaturization of the matching circuit for final power amplifier was realized by using a multi-stage microstrip capacitor network and a printed circuit board(PCB)with high dielectric constant.A high pass filter was used as the interstage matching cir-cuit,which reduced the circuit size and improved the link gain.With the hybrid integration process,the miniaturization and high-density integration of each unit such as the power modulator,front-stage driving power amplifier and final-stage power amplifier were realized.The test results show that in the frequency band of 024-030 GHz,the operating voltage of the power amplifier is 50 V and the pulse width is 100μs.Under operating conditions of 10%duty cycle and 10 dBm input power,the in band output power is greater than 1000 W,the power additional efficiency is about 60%-69%,the power gain is greater than 50 dB,and the volume of the power amplifier is 46 mm×30 mm×6 mm.
关 键 词:千瓦级 GaN功率放大器 小型化 VHF频段 混合集成
分 类 号:TN722[电子电信—电路与系统]
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.15