抛光工艺参数对高纯氧化铝陶瓷基材抛光效果的影响  

Influence of Polishing Process Parameters on the Polishing Effect of High Purity Alumina Ceramic Substrate

作　　者：姚忠樱 崔鸽 常逸文 任瑞康 任佳乐 张洪波 旷峰华 Yao Zhongying;Cui Ge;Chang Yiwen;Ren Ruikang;Ren Jiale;Zhang Hongbo;Kuang Fenghua(Ceramics Science Institute,China Building Materials Academy Co.,Ltd.,Beijing 100024,China)

机构地区：[1]中国建筑材料科学研究总院有限公司陶瓷科学研究院,北京100024

出　　处：《半导体技术》2024年第1期56-63,共8页Semiconductor Technology

基　　金：国家自然科学基金(52032011)。

摘　　要：高纯氧化铝陶瓷基材广泛应用于精密电阻、微波集成电路等高端领域。为了获得具有超高平整度、纳米级表面质量的高纯氧化铝陶瓷基材,采用机械抛光(精研)与化学机械抛光(CMP)(精抛)相结合的工艺路线,系统研究了精研过程中的压力、转速、磨料的粒径、抛光液流速及CMP过程中的抛光压力、转速等工艺参数对抛光效果的影响。结果表明,精研压力为588 N,上、下研磨盘转速分别为45和50 r/min,多晶金刚石研磨液的粒径为1μm,磨料添加速率为15 mL/min,精研时长达到25 h时,陶瓷基材即可达到抛光工序的表面质量要求。抛光压力为588 N,上、下研磨盘转速分别为20和25 r/min,硅溶胶抛光液粒径为80 nm,抛光2 h时,高纯氧化铝陶瓷基材的表面粗糙度可达到纳米级别。High purity alumina ceramic substrates are widely used in precision resistors,microwave integrated circuits and other high-end fields.In order to obtain high purity alumina ceramic substrate with ultra-high flatness and nanoscale surface quality,the process route combining mechanical polishing(pre-cision lapping)and chemical mechanical polishing(CMP)(precision polishing)was adopted,and the effects of pressure,rotating speed,abrasive particle size and polishing fluid flow rate during the process of precision lapping and the pressure and rotating speed during the process of CMP on the polishing effect were systematically studied.The results show that when the precision lapping pressure is 588 N,the rota-ting speeds of the upper and lower lapping discs are 45 and 50 r/min respectively,the particle size of the polycrystalline diamond lapping liquid is 1μm,the abrasive adding rate is 15 mL/min and the precision lapping time is 25 h,the ceramic substrate can meet the surface quality requirements of the polishing process.When the polishing pressure is 588 N,the rotating speeds of the upper and lower lapping discs are 20 and 25 r/min respectively,and the particle size of the silica sol polishing liquid is 80 nm,the sur-face roughness of the high purity alumina ceramic substrate can reach the nanoscale after polishing for 2 h.

关 键 词：高纯氧化铝 机械抛光 化学机械抛光(CMP) 抛光参数 表面粗糙度 

分 类 号：TN304[电子电信—物理电子学]