基于电源调制的L波段高性能GaAsHBT功率放大器  

L⁃Band High Performance GaAs HBT Power Amplifier Based on Power Supply Modulation

作　　者：闭涛[1] 陈景龙 Bi Tao;Chen Jingong(Guangxi Radio and Television Technology Center,Nanning 530000,China;Shenzhen Zhenglong Xin Electronics Co.,Ltd.,Shenzhen 518000,China)

机构地区：[1]广西广播电视技术中心,南宁530000 [2]深圳市正龙鑫电子有限公司,广东深圳518000

出　　处：《半导体技术》2024年第1期71-76,共6页Semiconductor Technology

摘　　要：介绍了一种基于GaInP/GaAs异质结双极晶体管(HBT)工艺、电源调制的高峰均比、高功率附加效率L波段功率放大器芯片,可满足多载波聚合、大容量通信系统的要求。从器件层面控制基极表面复合、寄生电阻和电容,实现低膝点电压、跨导均匀的晶体管;在电路层面采用自适应偏置电路和谐波调谐等提升线性和功率附加效率。该放大器采用前级驱动加末级输出、驱动比为1∶6的两级晶体管架构和高低通搭配的匹配电路。测试结果表明,在5 V偏置电压下,该功率放大器的饱和输出功率大于35 dBm;在大功率回退时(8 dBm),增益变化小于2 dB,功率附加效率指标达到50%;对于调制带宽为25 kHz的16进制正交振幅调制(16QAM)通信系统,邻道功率比小于-38 dBc@27 dBm。A high peak-to-average ratio and high power added efficiency L-band power amplifier chip based on GaInP/GaAs heterojunction bipolar transistor(HBT)technology and power supply modu-lation was introduced,which met the requirements of multi-carrier aggregation and large-capacity commu-nication systems.The base surface compounding,parasitic resistance and capacitance were controlled from the device level to achieve transistors with low knee voltages and uniform transconductances.The adaptive bias circuits and harmonic tuning were adopted at the circuit level to improve linearity and power added efficiency.The amplifier adopted a two-stage transistor architecture of a pre-drive plus a final output with a drive ratio of 1∶6,and a low-and high-pass hybrid matching circuit.The test results show that at the bias voltage of 5 V,the saturated output power of the power amplifier is greater than 35 dBm.At high-power backoff(8 dBm),the gain change is less than 2 dB,and the power additional efficiency reaches 50%.For a hexadecimal quadrature amplitude modulation(16QAM)communication system with a modulation bandwidth of 25 kHz,the adjacent channel power ratio(ACPR)is less than-38 dBc@27 dBm.

关 键 词：功率放大器 电源调制 GaAs异质结双极晶体管(HBT) 峰均比 邻道功率比(ACPR) 

分 类 号：TN722[电子电信—电路与系统]