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作 者:陈新平 Chen Xinping(College of Artificial Intelligence and Big Data,Chongqing College of Electronic Engineering Chongqing 401331)
机构地区:[1]重庆电子工程职业学院人工智能与大数据学院,重庆401331
出 处:《科技风》2024年第2期1-3,共3页
基 金:重庆市技术创新专项(No.cstc2019jscx-msxmX0168)。
摘 要:针对无线传感网中通信模块存在的发射功率小、接收灵敏度低、难以适应恶劣的工业无线环境的现状,本文设计了一种工作于470MHz频段的双向射频功率放大器。选用Renesas公司的SiGe工艺NPN晶体管NESG270034和NXP公司的第五代Si材料工艺NPN晶体管BFU530W分别设计正向放大器和反向放大器。利用ADS软件对其进行仿真及实验测试分析,测试结果表明:在470MHz频段内,正向放大器增益为18.9dB,S11小于-15dB,S22小于-15dB;反向放大器增益大于15dB,噪声系数小于1dB,S11小于-15dB,S22小于-15dB。最后联合cc1120~470MHz节点测试发射功率和接收灵敏度。Aimingat the situation of less transmit power and low receiving sensitivity in wireless communication module in industrial IOT wireless sensor network,a kind of bi-directional RF power amplifier working in 470MHz band has been designed in this paper.Choosing SiGe NPN transistor NESG270034 made by Renesas and the fifth generation of Si material technology NPN transistor BFU530W made by NXP to design forward amplifier and reverse amplifier respectively.The test results show that in the 470 MHZ band,the gain of forward amplifier is 18.9dB,S11 and S22 is less than-15dB;the gain of reverse amplifier is greater than 15dB,the noise factor is less than 1dB,S11 and S22 is less than-15dB.Testing the transmit power and receiver sensitivity with cc1120~470MHz node has proved the practicability of the bi-directional RF power amplifier at last.
分 类 号:TN722.75[电子电信—电路与系统] TN722.16
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