高纯度碳化硅单晶粉料合成工艺  

Synthesis Process of High Purity SiC Single Crystal Powder

作　　者：王殿 郭立梅 王飞龙 李林高 WANG Dian;GUO LiMei;WANG Feilong;LI Lingao(The 2nd Research Institute of CETC,Taiyuan 030024,China)

机构地区：[1]中国电子科技集团公司第二研究所,太原030024

出　　处：《电子工艺技术》2024年第1期46-50,共5页Electronics Process Technology

基　　金：山西省科技重大专项计划(2021101030201002)。

摘　　要：从碳化硅晶体生长工艺理论角度分析碳化硅粉料合成的工艺机理,对国内合成工艺现状进行综述,分析粉料合成的物相、粒径、纯度以及氮含量对长晶工艺的影响,结合长晶试验理论结果,制定粉料合成的工艺目标。采用粉料原位合成方式获得0.5~2.0 mm(8~40目)粒径的碳化硅单晶生长用高纯度粉料,晶型单一,纯度大于5N。经过后处理生长获得6英寸4H晶型的碳化硅晶锭,晶型单一,电阻率均匀,微管指标达到0.1个/cm^(2)以下。The process mechanism of SiC powder synthesis is analyzed from the perspective of SiC crystal growth process theory,and the current situation of domestic synthesis process is summarized.The influence of the phase,particle size,purity and nitrogen concentration of powder synthesis on the crystal growth process is analyzed,and the process goal of powder synthesis is formulated based on the theoretical results of crystal growth test.High-purity powder with particle size of 0.5~2.0 mm(8~40 mesh)is obtained by powder in-situ synthesis,with single crystal form and purity greater than 5N.After post-treatment,a 6-inch 4H crystalline SiC ingot is obtained.The crystal form is single and the resistivity is uniform,and the microtubule index reaches below 0.1ea/cm^(2).

关 键 词：晶型控制 粒径控制 氮含量 

分 类 号：TN304[电子电信—物理电子学]