基于TEOS源LPCVD设备的设计开发  

Design and Development of LPCVD Equipment Based on TEOS Source

作　　者：彭浩 姬常晓 赵瓛 PENG HAO;JI Changxiao;ZHAO Huan(The 48th Research Institute of CETC,Changsha 410111,China)

机构地区：[1]中国电子科技集团公司第四十八研究所,长沙410111

出　　处：《电子工艺技术》2024年第1期56-60,共5页Electronics Process Technology

摘　　要：在以TEOS源为SiO_(2)薄膜淀积源的低压化学气相沉积(LPCVD)工艺过程中,频繁出现薄膜厚度均匀性差、表面颗粒度高、设备维护周期短的问题。针对这个问题,设计并开发出一种适用于半导体工艺中的立式LPCVD设备。在设备结构上,工艺腔采用双管式结构,以提高气氛场均匀性;在晶舟系统中,增加自旋转功能,以提高晶圆表面气体含量的均匀性;为延长设备维护周期,并降低工艺颗粒度,排气管道增加伴热带和冷阱装置。基于此,通过工艺验证,有效提高了设备在线生产应用的可靠性。In the process of low pressure chemical vapor deposition(LPCVD)using TEOS as the deposition source of SiO_(2) thinfilm,there are many process problems,such as poor uniformity offilm thickness,hign grain size of wafer surface,short equipment maintenance cycle.To solve this problem,a vertical LPCVD equipment suitable for IC process is designed and developed.In the equipment structure,the process cavity adopts double tube structure to improve the uniformity of atmosphere field.The self rotation function of the boat is added to improve the uniformity of the gas content on the wafer surface.In order to improve equipment maintenance cycle and reduce the process particle size,heat tracing and cold trap devices are added to the exhaust pipe.Based on these measures,according to process verification,the reliability of on-line production and application are effectively improved.

关 键 词：立式LPCVD 工艺腔 旋转舟架 排气管道 

分 类 号：TN405[电子电信—微电子学与固体电子学]