氯离子诱导硒化锑棒纵向生长及其光电性能研究  

Effect of Cl^(-) on morphology and photoelectric properties of antimony selenide

作　　者：经潇倩 徐扬[1] JING Xiaoqian;XU Yang(College of Materials Science and Chemistry,China Jiliang University,Hangzhou 310018,China)

机构地区：[1]中国计量大学材料与化学学院,浙江杭州310018

出　　处：《中国计量大学学报》2023年第4期587-592,共6页Journal of China University of Metrology

基　　金：浙江省自然科学科学基金项目(No.LQ20E080019)。

摘　　要：目的:制备出纵向生长的硒化锑棒,以促进载流子传输从而提高硒化锑光电性能。方法:采用旋涂法制备CdCl_(2)/FTO基板,再通过水热沉积法在基板上生长硒化锑薄膜。通过改变基板上CdCl_(2)的质量浓度来探究Cl-质量-体积浓度对诱导硒化锑棒状垂直生长的影响规律,此外,通过光电化学测试来探究其对光电性能的影响。结果:XRD和SEM结果显示,经过CdCl_(2)处理过的硒化锑(002)衍射峰增强,垂直基底生长。且随着基板CdCl_(2)质量浓度提高,硒化锑棒状纵向生长更显著,且光电性能更优异。结论:Cl^(-)可以诱导硒化锑棒状纵向生长,且棒状纵向生长加快了载流子的传输速度,提高了硒化锑薄膜的光电性能。Aims:This paper aims to study the preparation of longitudinally-grown antimony selenide rods to promote carrier transport and improve the photoelectric performance of antimony selenide.Methods:The antimony selenide film was grown on the CdCl_(2)/FTO substrate by hydrothermal deposition.The effect of the Cl^(-)concentration on the vertical growth of the antimony selenide rod was investigated by changing the concentration of CdCl_(2) on the substrate.In addition,the effect of the Cl^(-)concentration on the photoelectric properties was investigated by the photoelectric chemical test.Results:XRD and SEM results showed that the diffraction peak of antimony selenide(002)treated by CdCl_(2) was enhanced and the substrate grew vertically.With the increase of the CdCl_(2) concentration on the substrate,the longitudinal rod-like growth of antimony selenide was more significant;and the photoelectric performance was better.Conclusions:The rod-like longitudinal growth of antimony selenide films can be induced by Cl^(-);and the rod-like longitudinal growth can accelerate the transfer rate of carriers and improve the photoelectric performance of antimony selenide films.

关 键 词：硒化锑棒状 金属氯化物处理基底 生长方向控制 

分 类 号：TQ135.31[化学工程—无机化工]