Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect  

作　　者：冯亚辉 郭红霞 刘益维 欧阳晓平 张晋新 马武英 张凤祁 白如雪 马晓华 郝跃 Ya-Hui Feng;Hong-Xia Guo;Yi-Wei Liu;Xiao-Ping Ouyang;Jin-Xin Zhang;Wu-Ying Ma;Feng-Qi Zhang;Ru-Xue Bai;Xiao-Hua Ma;Yue Hao(State Key Laboratory of Wide Bandgap Semiconductor Devices,School of Microelectronics,Xidian University,Xi'an 710071,China;School of Materials Science and Engineering,Xiangtan University,Xiangtan 411105,China;School of Space Science and Technology,Xidian University,Xi'an 710071,China;State Key Laboratory of Experimental Simulation and Effects of Strong Pulse Radiation,Northwest Institute of Nuclear Technology,Xi'an 710024,China)

机构地区：[1]State Key Laboratory of Wide Bandgap Semiconductor Devices,School of Microelectronics,Xidian University,Xi'an 710071,China [2]School of Materials Science and Engineering,Xiangtan University,Xiangtan 411105,China [3]School of Space Science and Technology,Xidian University,Xi'an 710071,China [4]State Key Laboratory of Experimental Simulation and Effects of Strong Pulse Radiation,Northwest Institute of Nuclear Technology,Xi'an 710024,China

出　　处：《Chinese Physics B》2024年第1期554-562,共9页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos.61574171,61704127,11875229,51872251,and 12027813)。

摘　　要：The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly.Notably, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.

关 键 词：silicon–germanium heterojunction bipolar transistor(Si Ge HBT) 100-Me V proton technology computer-aided design(TCAD) single event effect(SEE) 

分 类 号：TN322.8[电子电信—物理电子学]