Simulation of space heavy-ion induced primary knock-on atoms in bipolar devices  

作　　者：张彬 姜昊 徐晓东 应涛 刘中利 李伟奇 杨剑群 李兴冀 Bin Zhang;Hao Jiang;Xiao-Dong Xu;Tao Ying;Zhong-Li Liu;Wei-Qi Li;Jian-Qun Yang;Xing-Ji Li(School of Physics,Harbin Institute of Technology,Harbin 150001,China;School of Material Science and Engineering,Harbin Institute of Technology,Harbin 150001,China;State Key Laboratory of Intense Pulsed Radiation Simulation and Effect,Xi'an 710024,China)

机构地区：[1]School of Physics,Harbin Institute of Technology,Harbin 150001,China [2]School of Material Science and Engineering,Harbin Institute of Technology,Harbin 150001,China [3]State Key Laboratory of Intense Pulsed Radiation Simulation and Effect,Xi'an 710024,China

出　　处：《Chinese Physics B》2024年第1期573-580,共8页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos.11974091,51973046,U22B2044,and 21673025);the Open Projects of State Key Laboratory of Intense Pulsed Radiation Simulation and Effect (Grant No.SKLIPR2020)。

摘　　要：Bipolar junction transistors(BJTs) are often used in spacecraft due to their excellent working characteristics. However,the complex space radiation environment induces primary knock-on atoms(PKAs) in BJTs through collisions, resulting in hard-to-recover displacement damage and affecting the performance of electronic components. In this paper, the properties of PKAs induced by typical space heavy ions(C, N, O, Fe) in BJTs are investigated using Monte Carlo simulations. The simulated results show that the energy spectrum of ion-induced PKAs is primarily concentrated in the low-energy range(17eV–100eV) and displays similar features across all tested ions. The PKAs induced by the collision of energetic ions have large forward scattering angles, mainly around 88°. Moreover, the distribution of PKAs within a transistor as a function of depth displays a peak characteristic, and the peak position is linearly proportional to the incident energy at a certain energy range. These simulation outcomes serve as crucial theoretical support for long-term semiconductor material defect evolution and ground testing of semiconductor devices.

关 键 词：Monte Carlo simulation primary knock-on atom(PKA) space-heavy ion radiation damage 

分 类 号：TN322.8[电子电信—物理电子学] V443[航空宇航科学与技术—飞行器设计]