High responsivity photodetectors based on graphene/WSe_(2) heterostructure by photogating effect  

作　　者：李淑萍 雷挺 严仲兴 王燕 张黎可 涂华垚 时文华 曾中明 Shuping Li;Ting Lei;Zhongxing Yan;Yan Wang;Like Zhang;Huayao Tu;Wenhua Shi;Zhongming Zeng(Suzhou Industrial Park Institute of Services Outsourcing,Suzhou 215123,China;Nanofabrication Facility,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China;School of Nano Technology and Nano Bionics,University of Science and Technology of China,Hefei 230026,China;School of Electronics and Information Engineering,Wuxi University,Wuxi 214105,China)

机构地区：[1]Suzhou Industrial Park Institute of Services Outsourcing,Suzhou 215123,China [2]Nanofabrication Facility,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China [3]School of Nano Technology and Nano Bionics,University of Science and Technology of China,Hefei 230026,China [4]School of Electronics and Information Engineering,Wuxi University,Wuxi 214105,China

出　　处：《Chinese Physics B》2024年第1期728-733,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant No.11974379);the National Key Basic Research and Development Program of China (Grant No.2021YFC2203400);Jiangsu Vocational Education Integrated Circuit Technology “Double-Qualified” Famous Teacher Studio (Grant No.2022-13)。

摘　　要：Graphene, with its zero-bandgap electronic structure, is a highly promising ultra-broadband light absorbing material.However, the performance of graphene-based photodetectors is limited by weak absorption efficiency and rapid recombination of photoexcited carriers, leading to poor photodetection performance. Here, inspired by the photogating effect, we demonstrated a highly sensitive photodetector based on graphene/WSe_(2) vertical heterostructure where the WSe_(2) layer acts as both the light absorption layer and the localized grating layer. The graphene conductive channel is induced to produce more carriers by capacitive coupling. Due to the strong light absorption and high external quantum efficiency of multilayer WSe_(2), as well as the high carrier mobility of graphene, a high photocurrent is generated in the vertical heterostructure. As a result, the photodetector exhibits ultra-high responsivity of 3.85×10~4A/W and external quantum efficiency of 1.3 × 10~7%.This finding demonstrates that photogating structures can effectively enhance the sensitivity of graphene-based photodetectors and may have great potential applications in future optoelectronic devices.

关 键 词：WSe_(2) HETEROSTRUCTURE PHOTODETECTOR photogating effect 

分 类 号：TN36[电子电信—物理电子学]