Engineering electrode interfaces for telecom-band photodetection in MoS_(2)/Au heterostructures via sub-band light absorption  

作　　者：Chengyun Hong Saejin Oh Vu Khac Dat Sangyeon Pak SeungNam Cha Kyung-Hun Ko Gyung-Min Choi Tony Low Sang-Hyun Oh Ji-Hee Kim 

机构地区：[1]Department of Energy Science,Sungkyunkwan University,Suwon 16419,Republic of Korea [2]Center for Integrated Nanostructure Physics(CINAP),Institute for Basic Science(IBS),Sungkyunkwan University,Suwon 16419,Republic of Korea [3]School of Electronic and Electrical Engineering,Hongik University,Seoul 04066,Republic of Korea [4]Department of Physics,Sungkyunkwan University,Suwon 16419,Republic of Korea [5]Department of Electrical and Computer Engineering,University of Minnesota,Minneapolis,MN 55455,USA [6]Department of Physics,Pusan National University,Busan 46241,Republic of Korea

出　　处：《Light(Science & Applications)》2023年第12期2677-2687,共11页光（科学与应用)（英文版）

基　　金：supported by the Institute for Basic Science of Korea(IBS-R011-D1);the National Research Foundation of Korea(NRF)Grants(RS-2023-00246477);Korea Institute of Science and Technology(KIST)Institutional Program(2E32570 and 2E32571).

摘　　要：Transition metal dichalcogenide(TMD)layered semiconductors possess immense potential in the design of photonic,electronic,optoelectronic,and sensor devices.However,the sub-bandgap light absorption of TMD in the range from near-infrared(NIR)to short-wavelength infrared(SWIR)is insufficient for applications beyond the bandgap limit.Herein,we report that the sub-bandgap photoresponse of MoS_(2)/Au heterostructures can be robustly modulated by the electrode fabrication method employed.We observed up to 60%sub-bandgap absorption in the MoS_(2)/Au heterostructure,which includes the hybridized interface,where the Au layer was applied via sputter deposition.The greatly enhanced absorption of sub-bandgap light is due to the planar cavity formed by MoS_(2) and Au;as such,the absorption spectrum can be tuned by altering the thickness of the MoS_(2) layer.Photocurrent in the SWIR wavelength range increases due to increased absorption,which means that broad wavelength detection from visible toward SWIR is possible.We also achieved rapid photoresponse(~150μs)and high responsivity(17 mA W^(-1))at an excitation wavelength of 1550nm.Our findings demonstrate a facile method for optical property modulation using metal electrode engineering and for realizing SWIR photodetection in wide-bandgap 2D materials.

关 键 词：MoS_(2) ABSORPTION ELECTRODE 

分 类 号：TN15[电子电信—物理电子学]