单晶SiC超精密加工研究进展  

Research Progress in Ultra-Precision Manufacturing of Single Crystal SiC

作　　者：田壮智 班新星 韩少星 段天旭 郑少冬 朱建辉 Tian Zhuangzhi;Ban Xinxing;Han Shaoxing;Duan Tianxu;Zheng Shaodong;Zhu Jianhui(School of Mechanical and Electrical Engineering,Henan University of Technology,Zhengzhou 450001,China;Henan Key Laboratory of Superhard Abrasives and Grinding Equipment,Zhengzhou 450001,China;Zhengzhou Research Institute for Abrasives&Grinding Co.,Ltd.,Zhengzhou 450001,China)

机构地区：[1]河南工业大学机电工程学院,郑州450001 [2]河南省超硬磨料磨削装备重点实验室,郑州450001 [3]郑州磨料磨具磨削研究所有限公司,郑州450001

出　　处：《微纳电子技术》2024年第1期35-49,共15页Micronanoelectronic Technology

基　　金：中国博士后科学基金(2022M712923);河南省科技攻关计划资助项目(232102221037);河南省重大科技专项(221100230100);河南工业大学高层次人才科研基金(2020BS026);河南省高等学校重点科研项目(22A460003);郑州市重大科技专项(2021KJZX0062)。

摘　　要：单晶碳化硅(SiC)的高脆性、高硬性和强化学惰性是制约第三代半导体超精密抛光发展的关键,实现衬底高效率、超光滑表面的加工具有挑战性。对于单晶SiC的化学机械抛光(CMP),分别从材料去除和工艺优化两个维度出发,阐述了CMP SiC的影响因素和规律,指出了该方法的不足。介绍了光催化、超声振动、电场、等离子体、磁流变、表面预处理等辅助CMP抛光方法,分析了复合增效抛光的去除机理和优势。通过对比发现,辅助能场的介入有助于改善SiC表面质量,并能获得较好的加工效果,然而,复合抛光技术涉及的能场复杂,多能场作用下的材料去除机制和工艺参数匹配仍需进行深入研究。最后,对未来单晶SiC超精密加工的研究给出了建议,并进行了展望。High brittleness,high hardness and strong chemical inertness of single crystal silicon carbide(SiC)are the key factors restricting the development of ultra-precision polishing of the third generation semiconductor,and it is challenging to achieve high efficiency and ultra-smooth surface manufacturing of the substrate.For the chemical mechanical polishing(CMP)of single crystal SiC,the influencing factors and rules of CMP SiC are described from the two dimensions of material removal and process optimization respectively,and the shortcomings of the method are pointed out.Then,the auxiliary CMP polishing methods such as photocatalysis,ultrasonic vibration,electric field,plasma,magnetorheology and surface pretreatment are introduced,and the removal mechanism and advantages of composite enhanced polishing are analyzed.Through comparison,it is found that the intervention of auxiliary energy field can improve the SiC surface quality and obtain better manufacturing effect.However,the energy field involved in composite polishing technology is complex,and the material removal mechanism and process parameter matching under the action of multi-energy field still need to be further studied.Finally,the suggestions and prospects of future research in ultra-precision manufacturing of single crystal SiC are provided.

关 键 词：单晶碳化硅(SiC) 化学机械抛光(CMP) 材料去除率(MRR) 表面粗糙度 增效抛光 

分 类 号：TN305.2[电子电信—物理电子学]