CMP抛光液中SiO_(2)磨料分散稳定性的研究进展  

Research Progress on Dispersion Stability of SiO_(2)Abrasive in CMP Slurry

在线阅读下载全文

作  者:程佳宝 石芸慧 牛新环 刘江皓 邹毅达 占妮 何潮 董常鑫 李鑫杰 Cheng Jiabao;Shi Yunhui;Niu Xinhuan;Liu Jianghao;Zou Yida;Zhan Ni;He Chao;Dong Changxin;Li Xinjie(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Tianjin Key Laboratory of Electronic Materials and Devices,Tianjin 300130,China)

机构地区:[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130

出  处:《微纳电子技术》2024年第2期25-35,共11页Micronanoelectronic Technology

基  金:河北省自然科学基金(E2021202018);河北省教育厅科技研究项目(QN2021041)。

摘  要:对SiO_(2)磨料在化学机械抛光(CMP)抛光液中的应用以及影响抛光液分散稳定性的因素进行了阐述,重点从SiO_(2)磨料分散稳定性的角度介绍了SiO_(2)磨料质量分数和粒径、抛光液pH值、表面活性剂种类和表面改性等对抛光液稳定性的影响,通过分析Zeta电位绝对值的范围、凝胶时间的长短、粒径随时间的变化和接触角等,总结了小粒径(35 nm左右)SiO_(2)磨料在抛光液中的分散机理,同时探讨了弱碱性环境对磨料Zeta电位的影响,阳离子、阴离子和非离子表面活性剂对磨料表面的作用机理和复配使用的效果,以及表面疏水化或亲水化改性对磨料分散稳定性的影响。最后对该领域未来的发展方向进行了展望。The application of SiO_(2)abrasive in chemical mechanical polishing(CMP)slurry and the effects of the factors on the dispersion stability of the slurry are expounded.The effects of the mass fractions and particle sizes of SiO_(2)abrasive,pH value of the slurry,types of surfactants and surface modification on the stability of the slurry are introduced from the perspective of dispersion stability of SiO_(2)abrasive.By analyzing the absolute value range of Zeta potential,the length of gel time,the change of particle size with time,the measurement of contact angle and so on,the dispersion mechanism of SiO_(2)abrasive with small particle size(~35 nm)in the polishing slurry is summarized,and the influence of weak alkaline environment on the Zeta potential of the abrasive is discussed.Furthermore,the action mechanisms and compounding use effects of cationic,anionic and nonionic surfactants on abrasive surfaces are explored,as well as the impact of surface hydrophobic or hydrophilic modification on the dispersion stability of the abrasive.Finally,the future development directions in the field are prospected.

关 键 词:化学机械抛光(CMP) SiO_(2)磨料 表面活性剂 分散稳定性 PH值 

分 类 号:TN305.2[电子电信—物理电子学] TQ421.4[化学工程]

 

参考文献:

正在载入数据...

 

二级参考文献:

正在载入数据...

 

耦合文献:

正在载入数据...

 

引证文献:

正在载入数据...

 

二级引证文献:

正在载入数据...

 

同被引文献:

正在载入数据...

 

相关期刊文献:

正在载入数据...

相关的主题
相关的作者对象
相关的机构对象