Realizing p-type performance in low-thermal-conductivity BiSbSe_(3) via lead doping  

作　　者：Si-Ning Wang Han-Chen Lu Du-Jiang Li Yang Jin Xing-Yi Li Yan Yan Kai Gu Yu-Ting Qiu Li-Dong Zhao 

机构地区：[1]School of Materials Science and Engineering,Beihang University,Beijing,100191,China [2]Flying College,Beihang University,Beijing,100191,China [3]School of Energy and Power Engineering,Beihang University,Beijing,100191,China [4]School of Mechanical Engineering and Automation,Beihang University,Beijing,100191,China [5]Beihang School,Beihang University,Beijing,100191,China [6]Key Laboratory of Intelligent Sensing Materials and Chip Integration Technology of Zhejiang Province(2021E10022),Hangzhou Innovation Institute of Beihang University,Hangzhou,310051,China

出　　处：《Rare Metals》2023年第11期3601-3606,共6页稀有金属（英文版）

基　　金：financially supported by the National Natural Science Foundation of China (Nos.52002011,51571007,and 51772012);the National Key Research and Development Program of China (No.2021YFB3201100);the National Key Research and Development Program of China (No.2018YFA0702100);Beijing Natural Science Foundation (No.JQ18004);111 Project (No.B17002);the National Science Fund for Distinguished Young Scholars (No.51925101);the Opening Project of State Key Laboratory of High Performance Ceramics and Superfine Microstructure (No.SKL202005SIC)。

摘　　要：BiSbSe_(3) is an intrinsic n-type thermoelectric material,which attracts a lot of research interest due to its low lattice thermal conductivity and multiple band structure,and it exhibits excellent thermoelectric properties in the midtemperature region.However,there is little research on p-type BiSbSe_(3).This work realized the successful preparation of p-type BiSbSe_(3) through Pb doping.The thermoelectric transport properties of Pb-doped p-type BiSbSe_(3)were investigated.Pb doping could further reduce the thermal conductivity of BiSbSe_(3).All Pb-doped samples exhibited and maintained stable p-type transmissionthroughout the working temperature range(300-723 K).This work proves that Pb can be successfully used as a p-type dopant for BiSbSe_(3).

关 键 词：DOPANT DOPING CONDUCTIVITY 

分 类 号：TB34[一般工业技术—材料科学与工程]