高速SiC-MOSFET叠层封装结构设计及性能评估  

High speed package-on-package structure designed for SiC-MOSFET and its performance evaluation

作　　者：马久欣 马剑豪 任吕衡 余亮[1] 姚陈果[1] 董守龙[1] Ma Jiuxin;Ma Jianhao;Ren Lüheng;Yu Liang;Yao Chenguo;Dong Shoulong(National Key Laboratory of Power Transmission Equipment Technology,Chongqing University,Chongqing 400044,China)

机构地区：[1]重庆大学输变电装备技术全国重点实验室,重庆400044

出　　处：《强激光与粒子束》2024年第2期138-144,共7页High Power Laser and Particle Beams

基　　金：国家自然科学基金项目(52277135);国防科技大学脉冲功率激光技术国家重点实验室开放基金项目(SKL2020KF02);重庆市研究生科研创新项目(CYB23027)。

摘　　要：作为脉冲系统的核心部件,开关承担着脉冲成形、功率调制等重要作用,开关通断速度往往决定脉冲上升时间,高速开关是纳秒短脉冲形成的关键。提出一种高速SiC-MOSFET叠层封装结构,整体布局无引线、无外接,具有极低寄生电感。开展了电磁场仿真研究,揭示了脉冲形成过程中封装多介质界面电磁场分布规律,明确了封装结构电磁薄弱环节,为进一步绝缘优化提供指导。搭建双脉冲测试平台,对研制的SiC-MOSFET叠层封装开关与同芯片商用TO-263-7封装开关的动态性能进行测试。结果表明,大电流工况下,所提封装电流开通速度提升48%,关断速度提升50%,开通损耗降低54.6%,关断损耗降低62.8%,实验结果验证了所提叠层封装结构对开关动态性能的改善。As the core component of pulse power system,switch plays an important role in pulse forming andpower modulation.Usually,the rise time of the pulse generated is determined by the on-off speed of switch and thehigh-speed switch is vital to the formation of nanosecond short pulses.Therefore,this paper proposes a high-speedSiC-MOSFET package on package structure.The overall layout has no lead or external connection,and has very lowparasitic inductance.In this paper,the electromagnetic field simulation research of the proposed package is carried out,and the electromagnetic field distribution of the multi-media interface of the package is revealed during the pulseformation process.The electromagnetic weak link of the package structure is clarified,which provides guidance forfurther insulation optimization.A dual-pulse test platform was built to compare the dynamic performance of theproposed package-on-package structure switch and the commercial TO-263-7 package switch.The experimentalresults show that under high current conditions,the proposed packaging improves the turnning off by 48%,theturnning off speed by 50%,the turnning on loss by 54.6%,and the turnning off loss by 62.8%.The experimentalresults verify the improvement effect of the package-on-package structure on the switch dynamic performance.

关 键 词：脉冲功率开关 SiC-MOSFET 开关封装结构 双脉冲测试 开关动态性能 

分 类 号：TN78[电子电信—电路与系统]