基于双路MOS管的高压启动电路设计  

Design of High Voltage Starting Circuit Based on Dual MOSFETs

作　　者：李运平[1] 沈振兴 陈远晟 刘鑫 LI Yunping;SHEN Zhenxing;CHEN Yuansheng;LIU Xin(Yancheng University of Technology,Jiangsu 224051,China)

机构地区：[1]盐城工学院,江苏224051

出　　处：《电子技术（上海）》2023年第11期1-3,共3页Electronic Technology

基　　金：国家自然科学基金(52022039);盐城工学院校级科研项目(xjr2021016)。

摘　　要：阐述一种基于双路MOS管的高压启动电路的设计,此电路主要由光电耦合控制电路、高压控制MOSFET电路、开关信号电路和隔离电源电路组成。通过实验测试,此启动电路在调节低压输入信号的条件下能快速精准的实现高压电路的通断,可承受1 000V的高压,低压控制高压的导通响应时间优于2.5μs。This paper describes the design of a high-voltage start-up circuit based on dual MOSFETs,which mainly consists of a photoelectric coupling control circuit,a high-voltage control MOSFET circuit,a switch signal circuit,and an isolated power supply circuit.Through experimental testing,this startup circuit can quickly and accurately achieve the on/off of the high-voltage circuit under the condition of adjusting the low-voltage input signal,and can withstand a high voltage of 1kV.The conduction response time of the low-voltage control high voltage is better than 2.5μs.

关 键 词：电路设计 快速响应 高压控制 启动电路 

分 类 号：TN402[电子电信—微电子学与固体电子学]