Polybenzoxazine/organosilicon composites with low dielectric constant and dielectric loss  

作　　者：Manlin Yuan Xin Lu Xiaoyun Ma Hao Lin Angui Lu Liyan Shao Zhong Xin 

机构地区：[1]State Key Laboratory of Chemical Engineering,School of Chemical Engineering,East China University of Science and Technology,Shanghai 200237,China

出　　处：《Chinese Journal of Chemical Engineering》2023年第12期241-249,共9页中国化学工程学报（英文版）

基　　金：the Innovation Program of the Shanghai Municipal Education Commission(2019-01-07-00-02-E00061);the Shanghai Municipal Science and Technology Commission(21520761100).

摘　　要：The evolution of electronic communication technology raises higher requirements for low dielectric constant(low-k)materials.For this,a benzoxazine functional organosilicon(HP-aptes)with dense Si—O—Si crosslinking networks and large sterically hindered tert-butyl groups was prepared by the sol–gel method.Then,a series of polybenzoxazine composites(PPHP)were prepared from intrinsically low dielectric constant bis-functional benzoxazine monomer(P-aptmds)and HP-aptes.The double crosslinking networks of polybenzoxazine and organosilicon further increased the crosslinking density and decreased the dipole density of composites,which endowed the composites with enhanced low-k properties.When the content of HP-aptes is 30%(mass),the crosslinking density was 2.05×10^(-3)mol·cm^(-3),while that of PP-aptmds was 3.31×10^(-3)mol·cm^(-3).In addition,the dielectric constant and dielectric loss of PPHP composite at 1 MHz could reach 2.61 and 0.0056,respectively.

关 键 词：POLYBENZOXAZINE ORGANOSILICON COMPOSITE Dielectric constant 

分 类 号：TB332[一般工业技术—材料科学与工程]