Highly crystalline,highly stable n-type ultrathin crystalline films enabled by solution blending strategy toward organic single-crystal electronics  

作　　者：Yang Liu Shuyu Li Yihan Zhang Xiaoting Zhu Fangxu Yang Fei Jiao Wenping Hu 

机构地区：[1]Tianjin Key Laboratory of Molecular Optoelectronic Sciences,Department of Chemistry,School of Science,Tianjin University,Tianjin 300072,China [2]Haihe Laboratory of Sustainable Chemical Transformations,Tianjin 300192,China

出　　处：《Chinese Chemical Letters》2024年第1期321-325,共5页中国化学快报（英文版）

基　　金：the financial support of the National Key Research and Development Program(No.2022YFF1202700);National Natural Science Foundation of China(No.52121002);the Haihe Laboratory of Sustainable Chemical Transformations.

摘　　要：The development of n-type semiconductor is still far behind that of p-type semiconductor on account of the challenges in enhancing carrier mobility and environmental stability.Herein,by blending with the polymers,n-type ultrathin crystalline thin film was successfully prepared by the method of meniscus-guided coating.Remarkably,the n-type crystalline films exhibit ultrathin thickness as low as 5 nm and excellent mobility of 1.58 cm^(2) V^(-1) s^(-1),which is outstanding in currently reported organic n-type transistors.Moreover,the PS layer provides a high-quality interface with ultralow defect which has strong resistance to external interference with excellent long-term stability,paving the way for the application of n-type transistors in logic circuits.

关 键 词：n-type organic field effect transistors Ultrathin film High-performance Composites 

分 类 号：TB383.2[一般工业技术—材料科学与工程]