体布拉格光栅外腔半导体激光器前端面反射率对输出光谱特性的影响  

Influence of Front Face Reflectivity on Output Spectral Characteristics of Semiconductor Lasers with Volume Bragg Grating External Cavities

作　　者：王伟康 张翔 罗薇[4] 杨国文 袁孝 Wang Weikang;Zhang Xiang;Luo Wei;Yang Guowen;Yuan Xiao(School of Optoelectronic Science and Engineering,Soochow University,Suzhou 215006,Jiangsu,China;Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province,Suzhou 215006,Jiangsu,China;Key Lab of Modern Optical Technologies of Education Ministry of China,Suzhou 215006,Jiangsu,China;Dogain Optoelectronic Technology(Suzhou)Co.,Ltd.,Suzhou 215000,Jiangsu,China)

机构地区：[1]苏州大学光电科学与工程学院,江苏苏州215006 [2]江苏省先进光学制造技术重点实验室,江苏苏州215006 [3]教育部现代光学技术重点实验室,江苏苏州215006 [4]度亘核芯光电技术(苏州)有限公司,江苏苏州215000

出　　处：《中国激光》2023年第23期39-45,共7页Chinese Journal of Lasers

基　　金：国家自然科学基金(61775153);江苏高校优势学科建设工程资助项目。

摘　　要：采用反射式体布拉格光栅(VBG)实现半导体激光锁频是激光技术应用中的关键技术之一,进一步压窄半导体激光的输出光谱线宽、提高外腔效率是研究重点。采用微通道水冷半导体激光模块,利用衍射效率为18%的VBG构建激光外腔,分析了前端面反射率分别为0.02%、0.20%、0.40%时的输出光谱与外腔效率。研究结果表明,半导体激光前端面反射率的降低能够进一步优化半导体激光器的输出光谱,提高外腔效率,压窄输出光谱线宽,实现大驱动电流范围的激光锁频。对于前端面反射率为0.02%的半导体激光器,激光输出中心波长锁定在779.8 nm处,光谱线宽压缩至0.08 nm,温漂系数为6.25 pm·℃^(-1),电流漂移系数为0.9 pm·A^(-1),外腔效率达到106%,连续输出功率达到127 W。Objective Semiconductor lasers are widely used in industrial processing,consumer electronics,and the military because of their high electro-optical conversion efficiency,large power-to-volume ratio,and long lifetime.One of the most important applications of semiconductor lasers is to pump other types of lasers.Their overall pumping efficiency is significantly higher than that of conventional pumping sources;however,their output spectral linewidth and central wavelength drift with temperature limit the actual pumping effect.One of the key research directions has always been to narrow the output spectral linewidth of semiconductor lasers and improve the efficiency of the external cavity.It is important to adopt effective technical methods to optimize the output spectral characteristics of semiconductor lasers and expand their application in fields of high spectral stability and precision.Methods This study proposes a compact external-cavity semiconductor laser.Based on this structure,the effects of the facet reflectivity of the semiconductor laser on the output characteristics of the system are studied.First,the effects of the facet reflectivity of the laser and the grating diffraction efficiency on the gain are discussed based on the net gain coefficient formula of the external cavity mode of the semiconductor laser.When the grating diffraction efficiency is maintained at a certain value,a high-contrast output can be achieved by reducing the facet reflectivity.Next,the optimization of the semiconductor laser dispersion characteristics with a fast-axis collimating lens is verified using the ZEMAX optical design software.A volume Bragg grating(VBG)external cavity feedback element is used to effectively compress the output spectral linewidth of the semiconductor laser and achieve a stable wavelength output.Finally,based on the discussion of the output spectra and power-current(P-I)curves of semiconductor lasers with different facet reflectivities,the optimization of the system output characteristics by reducing the s

关 键 词：激光器 波长稳定 线宽窄化 外腔反馈 体布拉格光栅 

分 类 号：TN248.4[电子电信—物理电子学]