组合光栅对半导体激光器的侧向模式调控作用  

Modulation Effect of Combined Grating on Lateral Modes of Semiconductor Laser

作　　者：杜志方 范杰 王海珠 邹永刚 马晓辉 Du Zhifang;Fan Jie;Wang Haizhu;Zou Yonggang;Ma Xiaohui(State Key Laboratory of High-Power Semiconductor Laser,Changchun University of Science and Technology,Changchun 130022,Jilin,China)

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《中国激光》2023年第23期97-103,共7页Chinese Journal of Lasers

基　　金：吉林省科技发展计划(20210201030GX)。

摘　　要：设计并制作了一种新型含有组合光栅结构的分布式布拉格反射(CDBR)半导体激光器。通过引入组合光栅结构,对分布式布拉格反射(DBR)激光器的高阶侧向模式进行调控,提升了高阶侧向模式的损耗,最终优化了远场光斑图案。实验制得的器件腔长为2 mm,脊波导宽度为40μm,高阶光栅周期为7μm,占空比为0.6。当注入电流为1.0 A时,组合光栅起到明显作用,远场光斑图案从DBR-激光二极管(LD)的多瓣优化到CDBR-LD的单瓣。CDBR-LD在电流为1.25 A时的饱和输出功率约为433 mW,斜率效率为0.337 W·A^(-1),注入电流为0.95 A时的光谱半峰全宽(FWHM)约为0.61 nm。Objective Distributed Bragg reflector laser diodes(DBR-LDs)are widely used in pump sources,detectors,sensors,solar cells,and other applications because of their small size,long operating life,and high photoelectric conversion efficiency.With the development of modern technology and the demand for laser sources,higher requirements have been proposed for lateral modes of semiconductor lasers.The output of the fundamental lateral mode can be achieved by etching a narrow-ridge waveguide structure as this can limit the formation of higher-order lateral modes;however,it is difficult to further improve the maximum output power owing to the limitation of the narrow-ridge structure.Lasers,integrated by connecting a narrow-ridge waveguide to an optical amplifier,can obtain higher output power in the fundamental lateral mode.However,integrated devices are large,and the manufacturing process is complex.The method of etching microstructures on wide-ridge waveguide devices proposed in recent years ensures that the device overcomes lateral mode limitations and achieves excellent output performance.In addition,research on DBR devices has primarily focused on the spectral study of Bragg gratings.There has been less analysis of the influence of the Bragg grating on lateral mode distribution.In this study,a wide-ridge waveguide-based distributed Bragg reflector semiconductor laser with a combination grating structure(CDBR-LD)is designed and fabricated,and the influence of the combined grating structure on the modulation of lateral modes is investigated.The combination grating can modulate the spectral characteristics of the device and overcome higher-order lateral mode limitations.Methods The internal action of a semiconductor laser resonator with a combined grating structure is analyzed and calculated using a finite-difference time-domain method.Owing to the complex internal actions of the device,the internal process is divided into two parts,which are analyzed separately:the incident light and feedback light.The combined grating

关 键 词：激光器 半导体激光器 组合光栅 侧向模式 远场光斑 脊波导 

分 类 号：TN365[电子电信—物理电子学]