隧道结纳米器件中的光电流调制与因素分析  

Optical Modulation and Cause Analysis of Photocurrent in Nanoscale Tunneling Junction Devices

作　　者：沈逸[1] 曾标峰 郑臻荣[1] 唐龙华[1] Shen Yi;Zeng Biaofeng;Zheng Zhenrong;Tang Longhua(College of Optical Science and Engineering,Zhejiang University,Hangzhou 310027,Zhejiang,China)

机构地区：[1]浙江大学光电科学与工程学院,浙江杭州310027

出　　处：《中国激光》2023年第23期238-245,共8页Chinese Journal of Lasers

基　　金：国家自然科学基金(62127818)。

摘　　要：激光耦合隧道结器件是国际前沿研究热点,伴随产生的电磁场局域增强或光整流等效应在等离激元光镊、单分子成像、单光子光源等领域有着重要的应用价值。为了解隧道结中的光电相互作用和特性,首先利用反馈电沉积制备获得了固态隧道结纳米器件,然后测定了激光功率、偏置电压、偏振方向和调制频率与光电流的关系,并结合有限元法和时域有限差分方法进行理论仿真,讨论了器件中光电流的组分及相关效应。结果表明,器件局部热膨胀效应、热伏效应和热载流子效应为光电流产生的主要原因,而光整流效应因受限于激光峰值功率,其结果并不显著。这些发现可为固态隧道结器件中的光学调控以及在纳米尺度上研究激光调制电子隧穿过程提供参考。Objective Laser-coupled tunneling junction devices can lead to various phenomena such as electromagnetic field local enhancement and optical rectification effects,which have significant applications in fields such as plasmon optical tweezers,single-molecule imaging,and single-photon light sources.Using optical fields to drive tunneling junction nanodevices may also reduce the size of electronic devices and improve their speed.The main methods to construct tunneling junction devices include tunneling junctions with adjusted nanogap through dynamic methods and tunneling junction devices with fixed nanogap through methods like electromigration and feedback electrodeposition.However,the fabrication of tunneling junction devices by electromigration still has the issues of high cost,time consumption,and low success rate.In previous works,our group successively fabricated novel solid-state tunneling junction nanodevices with stable nanogap through feedback electrodeposition,and these devices are appropriate for such research.In the present study,we couple continuous laser to the characteristic solid-state tunneling junction nanodevices and systematically study the cause of photoinduced tunneling current.We hope that our results may provide a reference for the optical manipulation and optoelectronic coupling of solid-state tunneling junction nanodevices,and contribute to the development of optically coupled solidstate tunneling junction-related devices and technologies.Methods The fabrication of solid-state tunneling junction nanodevices includes seven steps.Firstly,pullθ-shaped double-hole quartz glass tubes into nanoprobes with conical tips through external forces at both sides while heated at the center using a cone puller.Secondly,introduce butane gas into the double holes of the nanoprobes and use a butane spray gun to heat the tip,causing the butane gas to undergo pyrolysis and carbon deposition at the tip.Thirdly,insert copper wires with a diameter of 0.5 mm into the two holes,so that the front ends of the copper

关 键 词：光学器件 隧道结纳米器件 光电流 热效应 光整流效应 等离激元效应 

分 类 号：O436[机械工程—光学工程]