一种采用分段温度补偿的低温漂带隙基准源  

A low temperature drift bandgap reference source with piecewise temperature compensation

作　　者：席银征 李楠[1] 刁节涛[1] XI Yinzheng;LI Nan;DIAO Jietao(College of Electronic Science,National University of Defense Technology,Changsha 410073,China)

机构地区：[1]国防科技大学电子科学学院,湖南长沙410073

出　　处：《微电子学与计算机》2024年第1期118-125,共8页Microelectronics & Computer

基　　金：国家自然科学基金(62104256)。

摘　　要：提出了一款宽温度范围、低温漂系数的带隙基准源。以Banba结构的带隙基准源作为核心电路,产生开口向下的抛物线状输出基准电压,将抛物线顶点向高温段移动,使输出基准电压的高温段趋于平缓,利用分段温度补偿技术对低温段进行曲率补偿,补偿电流由不同温度系数的电流相减产生,有效降低了温漂系数,并拓宽了带隙基准源工作的温度范围。在0.18μm的标准互补金属氧化物半导体(CMOS)工艺下进行电路性能验证,仿真结果表明,在-50~150℃的温度范围内,提出的带隙基准源的温漂系数为0.65 ppm/℃,在1.8 V的电源电压下输出电压为760 mV,版图面积仅为0.01 mm^(2)。A bandgap reference with wide temperature range and low temperature drift coefficient is proposed.With the bandgap reference of Banba structure as the core circuit,the parabolic output reference voltage with an opening downward is generated,the parabola vertex is moved to the high temperature section,the high temperature section of the output reference voltage tends to be smooth,and the piecewise temperature compensation technique is used to compensate the curvature of the low temperature section,and the compensation current is generated by current subtraction with different temperature coefficients,which effectively reduces the temperature drift coefficient and broadens the temperature range of the bandgap reference.The circuit performance is verified under the standard 0.18μm CMOS process.The simulation results show that the temperature drift coefficient of the proposed bandgap reference is 0.65 ppm/℃in the temperature range of-50 to 150℃,the output voltage is 760 mV under the power supply voltage of 1.8 V,and the layout area is only 0.01 mm^(2).

关 键 词：带隙基准源 分段温度补偿 温漂系数 宽温度范围 互补金属氧化物半导体(CMOS) 

分 类 号：TN433[电子电信—微电子学与固体电子学]