电容器用高方阻金属化薄膜电极设计、解析与性能调控  

Design Analysis and Performance Regulation of High Square Resistance Metallized Dielectric Film Electrode for Capacitor

作　　者：董琦 李浩林 党智敏[2] DONG Qi;LI Haolin;DANG Zhimin(College of Education,Zhejiang University of Technology,Hangzhou 310023,China;State Key Laboratory of Power System Operation and Control,Department of Electrical Engineering,Tsinghua University,Beijing 100084,China;School of Materials Science and Engineering,Zhejiang Sci-Tech University,Hangzhou 310018,China)

机构地区：[1]浙江工业大学教科学院,杭州310023 [2]清华大学电机系新型电力系统运行与控制全国重点实验室,北京100084 [3]浙江理工大学材料学院,杭州310018

出　　处：《电力电容器与无功补偿》2024年第1期128-139,共12页Power Capacitor & Reactive Power Compensation

基　　金：国家重点研发计划(2021YFB2401504)。

摘　　要：金属化介质薄膜是高压电容器的关键组成部分,由于其突出的耐温耐压性能,被广泛应用于电力系统、脉冲功率和新能源汽车等领域。金属化薄膜具有优异的自愈特性,但在大电流冲击下,极薄的金属电极极易出现断裂、失效等现象,是影响电容器安全稳定运行的重要因素。此外,体积大、容量小等问题也严重限制了薄膜电容的应用,并由此形成了技术壁垒。而金属化介质薄膜在向小型化高容量发展的过程中,除新型介质薄膜材料的影响外,超薄高方阻金属化电极结构的设计对薄膜电容器性能的影响也逐渐开始显露。本文旨在综述近年来高方阻金属化薄膜的电极结构设计,及表/界面工程在电极结构设计中的应用与发展。总结过往从电极厚度、元素、图案化对金属化电极结构进行设计的局限性和存在的问题,分析了随着金属电极厚度从微米级向纳米级转变过程中界面在电气特性中承担的角色,偏重结合其自愈特性与电极结构相互作用的关系进行阐述。结合光电半导体领域中超薄金属化薄膜界面研究成果中介质薄膜金属化可以借鉴的界面研究方法,为应用于未来新能源领域中储能用超薄金属化膜如何利用界面开展结构设计及性能调控等方面提供参考。系统阐述了微观基础研究领域中金属化薄膜结构与界面设计对宏观电气性能调控的预测,并从根本上提出薄膜电容器领域发展的国产化关键技术。Metallized dielectric film,as one of the key elements of high voltage capacitor,is used widely in in the fields of power systems,pulse power and new-energy vehicles(NEVs)by virtue of its outstanding resistance in high-temperature and high-voltage.Also,the metallized film possesses excellent self-healing properties,the extremely thin metal electrodes are very prone to fracture and failure under large current,which is a crucial factor affecting safe operation of capacitor.In addition,the issue of large volume and small capacity also severely restricts the application of thin film capacitor,thus giving rise to forming the technical barriers.In the process of the development of miniaturization and high capacity for the metallized dielectric film,except for the influence of new dielectric film material itself,the effect of the structure design of ultra-thin high-square-resistance metallized electrode on the performance of thin film capacitors is also gradually beginning to emerge and become prominent.In this paper,the electrode structure design of high-square-resistance metallized film in recent years,as well as the application and development of surface/in-terface engineering in the electrode structure design are reviewed.Meanwhile,the limitations and problems of designing metallized electrode structure based on the electrode thickness,elements and patterning from the past to the present are summarized.The role of interface in electrical properties with the thickness of metal electrode changing from micron-to nano-scale is analyzed.The relationship between self-healing properties and electrode structure interaction is emphasized.Combined with the relevant interface research methodology of medium film metallization concerning the ultra-thin metallized film interface in optoelectronic semiconductors,this work provides an important reference on how to develop the structural design and per-formance control of ultra-thin metallized film by using interface for the storage energy ultra-thin metallized film in the field of n

关 键 词：金属化介质薄膜 高方阻 电极结构 表界面工程 电气特性 

分 类 号：TM53[电气工程—电器]