Greatly enhanced tunneling electroresistance in ferroelectric tunnel junctions with a double barrier design  

作　　者：Wei Xiao Xiaohong Zheng Hua Hao Lili Kang Lei Zhang Zhi Zeng 

机构地区：[1]Key Laboratory of Materials Physics,Institute of Solid State Physics,HFIPS,Chinese Academy of Sciences,Hefei 230031,China [2]Science Island Branch of Graduate School,University of Science and Technology of China,Hefei 230026,China [3]College of Information Science and Technology,Nanjing Forestry University,Nanjing 210037,China [4]School of Physics,Hangzhou Normal University,Hangzhou 311121,China [5]Institute for Computational Materials Science,School of Physics and Electronics,Henan University,Kaifeng 475004,China [6]State Key Laboratory of Quantum Optics and Quantum Optics Devices,Institute of Laser Spectroscopy,Shanxi University,Taiyuan 030006,China [7]Collaborative Innovation Center of Extreme Optics,Shanxi University,Taiyuan 030006,China

出　　处：《npj Computational Materials》2023年第1期853-860,共8页计算材料学（英文）

基　　金：We gratefully acknowledge the support from the National Natural Science Foundation of China(Grant Nos.11974355 and 12074230);National Key R&D Program of China under Grant No.2017YFA0304203;the Fund for Shanxi“1331 Project”and Shanxi Province 100-Plan Talent Program.Calculations were performed in Center for Computational Science of CASHIPS,the ScGrid of Supercomputing Center and Computer Network Information Center of Chinese Academy of Sciences.

摘　　要：We propose that the double barrier effect is expected to enhance the tunneling electroresistance(TER)in the ferroelectric tunnel junctions(FTJs).To demonstrate the feasibility of this mechanism,we design a model structure of Pt/BaTiO_(3)/LaAlO_(3)/Pt/BaTiO_(3)/LaAlO_(3)/Pt double barrier ferroelectric tunnel junction(DB-FTJ),which can be considered as two identical Pt/BaTiO_(3)/LaAlO_(3)/Pt single barrier ferroelectric tunnel junctions(SB-FTJs)connected in series.Based on density functional calculation,we obtain the giant TER ratio of 2.210×10^(8)%in the DB-FTJ,which is at least three orders of magnitude larger than that of the SB-FTJs of Pt/BaTiO_(3)/LaAlO_(3)/Pt,together with an ultra-low resistance area product(0.093 KΩμm^(2))in the high conductance state of the DB-FTJ.Moreover,it is possible to control the direction of polarization of the two single ferroelectric barriers separately and thus four resistance states can be achieved,making DB-FTJs promising as multi-state memory devices.

关 键 词：JUNCTIONS POLARIZATION FERROELECTRIC 

分 类 号：TN37[电子电信—物理电子学]