Quantum anomalous hall effect in collinear antiferromagnetism  

作　　者：Peng-Jie Guo Zheng-Xin Liu Zhong-Yi Lu 

机构地区：[1]Department of physics and Beijing Key Laboratory of Opto-electronic Functional Materials&Micro-nano Devices,Renmin University of China,100872 Beijing,China

出　　处：《npj Computational Materials》2023年第1期1655-1660,共6页计算材料学（英文）

基　　金：This work was financially supported by the NSF of China(No.12204533,No.12134020,No.11974421 and No.11934020.

摘　　要：The two-dimensional Quantum Hall effect with no external magnetic field is called the Quantum anomalous Hall (QAH) effect. Sofar, experimentally realized QAH insulators all exhibit ferromagnetic order and the QAH effect only occurs at very low temperatures.On the other hand, up to now the QAH effect in collinear antiferromagnetic (AFM) materials has never been reported and thecorresponding mechanism has never been proposed. In this work, we realize the QAH effect by proposing a four-band lattice modelwith static AFM order, which indicates that the QAH effect can be found in AFM materials. Then, as a prototype, we demonstratethat a monolayer CrO can be switched from an AFM Weyl semimetal to an AFM QAH insulator by applying strain, based onsymmetry analysis and the first-principles electronic structure calculations. Our work not only proposes a scenario to search for QAHinsulators in materials, but also reveals a way to considerably increase the critical temperature of the QAH phase.

关 键 词：MATERIALS EFFECT EFFECT 

分 类 号：O441[理学—电磁学]