Bidirectional rectifier with gate voltage control based on Bi_(2)O_(2)Se/WSe_(2)heterojunction  

作　　者：Ruonan Li Fangchao Lu Jiajun Deng Xingqiu Fu Wenjie Wang He Tian 

机构地区：[1]North China Electric Power University and Hebei Key Laboratory of Physics and Energy Technology,Beijing 102206,China [2]School of Integrated Circuits&Beijing National Research on Information Science and Technology(BNRist),Tsinghua University,Beijing 100084,China

出　　处：《Journal of Semiconductors》2024年第1期63-70,共8页半导体学报（英文版）

基　　金：This work was supported by the National Natural Science Foundation of China(61704054,92161115,62374099,and 62022047);the Fundamental Research Funds for the Central Universities(JB2020MS042 and JB2019MS051).

摘　　要：Two-dimensional(2D)WSe_(2)has received increasing attention due to its unique optical properties and bipolar behavior.Several WSe_(2)-based heterojunctions exhibit bidirectional rectification characteristics,but most devices have a lower rectification ratio.In this work,the Bi_(2)O_(2)Se/WSe_(2)heterojunction prepared by us has a typeⅡband alignment,which can vastly suppress the channel current through the interface barrier so that the Bi_(2)O_(2)Se/WSe_(2)heterojunction device has a large rectification ratio of about 10^(5).Meanwhile,under different gate voltage modulation,the current on/off ratio of the device changes by nearly five orders of magnitude,and the maximum current on/off ratio is expected to be achieved 106.The photocurrent measurement reveals the behavior of recombination and space charge confinement,further verifying the bidirectional rectification behavior of heterojunctions,and it also exhibits excellent performance in light response.In the future,Bi_(2)O_(2)Se/WSe_(2)heterojunction field-effect transistors have great potential to reduce the volume of integrated circuits as a bidirectional controlled switching device.

关 键 词：Bi_(2)O_(2)Se WSe_(2) HETEROJUNCTION bidirectional rectification optoelectronic devices 

分 类 号：TM461[电气工程—电器]