Enhanced thermal emission from metal-free,fully epitaxial structures with epsilon-near-zero InAs layers  

作　　者：Karolis Stašys Andrejus Geižutis Jan Devenson 

机构地区：[1]State Research Institute Center for Physical Sciences and Technology,Savanoriųave.231,L-T02300 Vilnius,Lithuania

出　　处：《Journal of Semiconductors》2024年第2期34-39,共6页半导体学报（英文版）

摘　　要：We introduce a novel method to create mid-infrared(MIR)thermal emitters using fully epitaxial,metal-free structures.Through the strategic use of epsilon-near-zero(ENZ)thin films in InAs layers,we achieve a narrow-band,wide-angle,and p-polarized thermal emission spectra.This approach,employing molecular beam epitaxy,circumvents the complexities associated with current layered structures and yields temperature-resistant emission wavelengths.Our findings contribute a promising route towards simpler,more efficient MIR optoelectronic devices.

关 键 词：epsilon-near-zero thermal emitters indium arsenide LWIR(long wave infraRed) molecular beam epitaxy 

分 类 号：TN304.054[电子电信—物理电子学]