钼片上少层MoS_(2)薄膜制备及其结构性能研究  

Preparation of Few-layer MoS_(2) Films with High Crystalline Quality and Research on Their Structural Properties

作　　者：刘金程 齐东丽[1] 秦艳利[1] 沈龙海[1] LIU Jincheng;QI Dongli;QIN Yanli;SHEN Longhai(School of Science,Shenyang Ligong University,Shenyang 110159,China)

机构地区：[1]沈阳理工大学理学院,辽宁沈阳110159

出　　处：《佳木斯大学学报（自然科学版）》2024年第1期166-168,180,共4页Journal of Jiamusi University：Natural Science Edition

基　　金：辽宁省教育厅科学研究面上重点项目(LJKZ0238)。

摘　　要：采用气-固法在Mo基片制备高结晶质量的少层MoS_(2)薄膜。通过X射线衍射仪(XRD)、拉曼光谱仪和光学显微镜(OM)对样品的结构和形貌进行表征,研究生长温度对薄膜结构、形貌和光致发光性能的影响。结果表明:在温度为800,900,1000℃生长的大面积薄膜呈现枝状晶结构;随着生长温度的增加制备的薄膜结晶性能越来越好;所有样品特征拉曼峰均位于385.7 cm^(-1)和410.8 cm^(-1)附近,这两个特征峰的差值为25.1 cm^(-1),表明生长的薄膜为少层MoS_(2)膜;所有样品在693 nm处出现发光峰,对应带隙1.789 eV属于直接带隙半导体。该方法制备的薄膜在实现具有宽波段吸收和高光响应度的光电探测器件方面具有重要的应用价值。High-quality few-layer MoS_(2) films were prepared on Mo substrates using a gas-solid method.The structure and morphology of the sample were characterized by X-ray diffractometer(XRD),Raman spectrometer and optical microscope(OM),and the effects of growth temperature on the structure,morphology and photoluminescence properties of the thin film were studied.The results show that large-area thin films grown at temperatures of 800,900,and 1000℃ exhibit a dendritic crystal structure,the crystallinity of the prepared films improves with increasing growth temperature.The characteristic Raman peaks of all samples are located near 385.7 cm^(-1) and 410.8 cm^(-1) with a difference of 25.1 cm^(-1) between these two characteristic peaks,indicating that the grown films are few-layer MoS2 films.All samples exhibit a luminescence peak at 693 nm,corresponding to a bandgap of 1.789 eV belonging to a direct bandgap semiconductor.The films prepared by this method have important application value in achieving photodetector devices with wide-band absorption and high photoresponsivity.

关 键 词：气-固法 MoS_(2) 结晶质量 光致发光 

分 类 号：O782[理学—晶体学]