硅压敏电阻刻蚀形貌对高温压力传感器输出特性影响  

Output Characteristics Influence of Silicon Piezoresistor Etching Morphology on High Temperature Pressure Sensors

作　　者：冀鹏飞 赵妍琛 雷程[1] 梁庭[1] 刘润鹏 党伟刚 JI Pengfei;ZHAO Yanchen;LEI Cheng;LIANG Ting;LIU Runpeng;DANG Weigang(North University of China,State Key Laboratory of Dynamic Measurement Technology,Taiyuan 030051,China;Xian Aerospace Power Research Institute,Xian 710199,China)

机构地区：[1]中北大学,省部共建动态测试技术国家重点实验室,山西太原030051 [2]西安航天动力研究所,陕西西安710199

出　　处：《仪表技术与传感器》2023年第12期10-15,共6页Instrument Technique and Sensor

基　　金：国家重点研发计划项目(2023YFB3209100);山西省重点研发计划项目(202102030201001,202102030201009);山西省科技重大专项计划“揭榜挂帅”项目(202201030201004)。

摘　　要：为解决压力传感器在高温下的热零点漂移问题,文中提出一种压敏电阻均匀刻蚀的方案。通过控制变量法改变沉积和刻蚀聚合物时序参数,解决了制备硅电阻条出现的微负载效应,减小了压力传感器中惠斯登电桥不平衡性。对比了不同参数下的刻蚀效果,得出最佳刻蚀参数为1个循环内钝化时间2 s、刻蚀时间4.8 s,刻蚀图案成功保持了设计图形的关键特征,电阻条连接处曲线平滑、侧壁角度锐利,垂直度达到了88.6°。最终制备的芯片在300℃环境下进行压力测试,测试结果表明传感器芯片热零点漂移率降低了46.7%,验证了该方案对改善芯片高温下热零点漂移的可行性。In order to solve the problem of hot zero-point drift of the pressure sensor at high temperature,a scheme with uni-formly etching of pressure-sensitive resistance was proposed.The sequential parameters of the sedimentation and etching polymer were changed by controlling the variable method,which solved the microloading of preparing silicon resistance bars,and reduced the imbalance of Wheatstone bridge in the pressure sensor.Comparing the etching effect under different parameters,the best etch-ing parameter was that the passivation time was 2 s and the etching time was 4.8 s in a single cycle.The etching pattern success-fully maintained the key feature of the design graphics,the resistance bar connection curve is smooth,the side wall Angle is sharp,and the perpendicularity reaches 88.6°.The final prepared chip was tested under pressure at 300℃,and the test results show that the thermal zero drift rate of the sensor chip is reduced by 46.7%,which verifies the feasibility of the scheme to im-prove the thermal zero drift of the chip at high temperature.

关 键 词：压敏电阻刻蚀 热零点漂移 Bosch工艺 微负载效应 刻蚀形貌 

分 类 号：TN305[电子电信—物理电子学]