Flexo-photocatalysis in centrosymmetric semiconductors  

作　　者：Kang Liu Tong Wu Luying Xu Zhuangzhuang Zhang Zhiyu Liu Longfei Wang Zhong Lin Wang 

机构地区：[1]Center on Nanoenergy Research,School of Physical Science&Technology,Guangxi University,Nanning 530004,China [2]Beijing Institute of Nanoenergy and Nanosystems,Chinese Academy of Sciences,Beijing 101400,China [3]College of Nanoscience and Technology,University of Chinese Academy of Sciences,Beijing 100049,China [4]Georgia Institute of Technology,Atlanta,GA 30332-0245,USA [5]Yonsei Frontier Lab,Yonsei University,Seoul 03722,Republic of Korea

出　　处：《Nano Research》2024年第3期1173-1181,共9页纳米研究（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.52202162).

摘　　要：The separation of photogenerated electron–hole pairs is vitally important for photocatalysis,which can be effectively promoted by polarization field.However,it only manifests in piezoelectric/pyroelectric/ferroelectric materials that have a non-centrosymmetric structure.Here,we demonstrate that the polarization enhanced photocatalysis(with wide spectra from ultraviolet(UV)light to visible light)can be achieved in centrosymmetric semiconductors,such asδ-MnO_(2) and TiO_(2) nanosheets integrated nanoflowers,by using the strain-gradient-induced flexoelectric polarization that is always overlooked in polarization-enhanced catalysis.Under ultrasonic and illumination excitation,the organic pollutants(methylene blue(MB),etc.)can be effectively degraded within 30 min with excellent stability and repeatability.Compared with photocatalysis,the flexo-photocatalytic performance of above centrosymmetric semiconductors is substantially increased by 85%.Moreover,the factors related to flexo-photocatalysis such as material morphology,mechanical stimuli source,and adsorption are explored to deeply understand the mechanism of flexo-photocatalysis.This work opens up a way for high-performance photocatalysis in centrosymmetric semiconductors.

关 键 词：piezo-photocatalysis PHOTOCATALYSIS FLEXOELECTRICITY POLARIZATION centrosymmetric semiconductor 

分 类 号：O644.1[理学—物理化学]