Atomscopic of ripple origins for two-dimensional monolayer transition metal dichalcogenides  

作　　者：Haitao Yu Mingzi Sun Xiao Wu Cheuk Hei Chan Bolong Huang Zhong Lin Wang 

机构地区：[1]CAS Center for Excellence in Nanoscience,Beijing Institute of Nanoenergy and Nanosystems,Chinese Academy of Sciences,Beijing 100083,China [2]School of Nanoscience and Technology,University of Chinese Academy of Sciences,Beijing 100049,China [3]Department of Applied Biology and Chemical Technology,The Hong Kong Polytechnic University,Kowloon 999077,Hong Kong,China [4]Research Centre for Carbon-Strategic Catalysis,The Hong Kong Polytechnic University,Kowloon 999077,Hong Kong,China [5]School of Materials Science and Engineering,Georgia Institute of Technology,Atlanta,Georgia 30332,USA

出　　处：《Nano Research》2024年第3期2136-2144,共9页纳米研究（英文版）

基　　金：support from the National Key R&D Program of China(No.2021YFA1501101);the National Natural Science Foundation of China/Research Grant Council of Hong Kong Joint Research Scheme(No.N_PolyU502/21);the funding for Projects of Strategic Importance of The Hong Kong Polytechnic University(Project Code:1-ZE2V);the Shenzhen Fundamental Research Scheme-General Program(No.JCYJ20220531090807017);the Natural Science Foundation of Guangdong Province(No.2023A1515012219);the Departmental General Research Fund(Project Code:ZVUL)from The Hong Kong Polytechnic University.

摘　　要：During the development of ultrathin two-dimensional(2D)materials,the appearance of ripples has been widely observed.However,the formation mechanisms and their influences are still rarely investigated,especially their contributions to the electronic structures and optical properties.To compensate for the knowledge gap,we have carried out comprehensive theoretical studies on the monolayer WSe_(2) with a series of ripple structures from 0 to 12Åin different lattice sizes.The sensitivity of the formation energy,band structures,electronic structures,and optical properties to the ripple structures have been performed systematically for the first time.The formation of ripples in Armchair and zigzag simultaneously are more energetically favorable,leading to more flexible optimizations of the optoelectronic properties.The improved charge-locking effect and extension of absorption ranges indicate the significant role of ripple structures.The spontaneous formation of ripples is associated with orbital rearrangements and structural distortions.This leads to the unique charge carrier correlate inversion between W-5d and Se-4p orbitals,resulting in the pinning of the Fermi level.This work has supplied significant references to understand ultrathin 2D structures and benefit their future developments and applications in high-performance optoelectronic devices.

关 键 词：two-dimensional(2D)materials RIPPLES strain effect charge carrier correlation inversion optoelectronic properties 

分 类 号：TB30[一般工业技术—材料科学与工程]