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作 者:万淇通 张云飞 张梦雅 梁博 邴丽娜[1] 沈振江[1] WAN Qitong;ZHANG Yunfei;ZHANG Mengya;LIANG Bo;BING Lina;SHEN Zhenjiang(College of Physics and Electronic Engineering,Hainan Normal University,Haikou 571158,China)
机构地区:[1]海南师范大学物理与电子工程学院,海南海口571158
出 处:《海南师范大学学报(自然科学版)》2023年第4期400-408,共9页Journal of Hainan Normal University(Natural Science)
基 金:海南省自然科学基金项目(521QN240,220RC595);国家自然科学基金项目(11304069);海南师范大学物理学学科建设经费。
摘 要:采用固相法制备BaTiO_(3)陶瓷,研究了烧结温度和烧结升温速率对陶瓷试样晶体结构、微观形貌、介电性能的影响。实验表明,所制陶瓷均为四方相钙钛矿晶格结构。烧结温度低会造成较多点缺陷,随烧结温度的增大,晶体均匀度和致密性有效提高,晶粒尺寸增大有助于促进畴壁运动,介电性能有所提升。烧结升温速率过慢同样会造成点缺陷浓度增多,且有液相生成,气孔较多,气孔含量高会降低介电性能的稳定性、减小介电常数、增大介电损耗;提高升温速率同样有助于提高晶粒尺寸、均匀度和致密性,当晶粒尺寸到达单畴晶粒尺寸附近时,内应力为0,90°铁电畴贡献高介电常数;但过快的升温速率会出现“过烧现象”,致使介电性能下降。当以5℃/min的烧结升温速率升温至1 275℃时,介电常数最大,介电损耗最小,其值分别为ε=2 374,tanδ=0.023 18。BaTiO_(3) ceramics were prepared by solid phase method.The effects of sintering temperature and sintering tem⁃perature on crystal structure,microstructure and dielectric properties of ceramic samples were investigated.The results showed that all the ceramics produced had a tetragonal perovskite lattice structure.Low sintering temperature lead to more defects at multiple points.With the increase of sintering temperature,the uniformity and density of crystals were improved effectively.The increase of grain size promoted the movement of domain walls and improve the dielectric properties.Too slow sintering heating rate also resulted in high point defect concentration,liquid phase generation,more porosity.High po⁃rosity content reduced the stability of dielectric properties and dielectric constant,and increased dielectric loss.Increasing the heating rate also helped to improve the grain size,uniformity and densification.When the grain size reached around that of single domain,the internal stress of 0,90°ferroelectric domain contributed high dielectric constant.However,too fast heating rate generated"overburning phenomenon"resulting in dielectric properties decline.When the sintering tempera⁃ture rised to 1275℃at the rate of 5℃/min,the dielectric constant was the maximum and the dielectric loss was the minimum,whose values wereε=2374,tanδ=0.02318.
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