薄膜宽度对于NiFe/Ta逆自旋霍尔效应影响的自动表征  

Automatic characterization of the effect of film width on the inverse spin Hall effect in NiFe/Ta film

作　　者：王嘉栋 骆培文 黄飞[1] 张文旭[1] WANG Jia-dong;LUO Pei-wen;HUANG Fei;ZHANG Wen-xu(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China)

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都611731

出　　处：《磁性材料及器件》2024年第1期1-5,共5页Journal of Magnetic Materials and Devices

基　　金：国家自然科学基金资助项目(12274060)。

摘　　要：通过分立模板镀膜法在同一块光刻版上设计了不同宽度的NiFe/Ta双层膜线条,采用磁控溅射镀膜制备样品。构建了自动化电测试系统实现批量测试样品的逆自旋霍尔电压信号。实验结果表明,样品宽度会影响测试电压信号的对称性和幅值,通过拟合得到信号的对称分量和反对称分量及其比值随着样品宽度的变化,并分析逆自旋霍尔电压和自旋整流电压的影响因素,发现随着样品宽度的减小,自旋整流效应带来的影响逐渐减小,且施加的微波磁场越大,这种变化越明显,其原因在于各向异性磁电阻对薄膜宽度的依赖性。研究结果对自旋电子器件的实用提供重要的设计依据和指导。Different width NiFe/Ta bilayer line patterns were designed on the same lithographic plate using a segmented template deposition method,and the samples were prepared by magnetron sputtering deposition.An automated electrical testing system was constructed to perform batch testing of the inverse spin Hall voltage signals of the samples.Experimental results show that the width of the samples affects the symmetry and amplitude of the testing voltage signal.By fitting the symmetric and antisymmetric components of the signal,their numerical values and ratios were obtained,as well as the curves of their changes with the sample width.By analyzing the factors affecting the inverse spin Hall voltage and the spin rectification voltage,it was found that as the sample width decreases,the effect of the spin rectification effect gradually decreases,and the larger the applied microwave magnetic field,the more obvious this change becomes.This is due to the dependence of the anisotropic magnetoresistance on the width of the thin film.This research provides important design principles and guidance for practical spin electronic devices.

关 键 词：NiFe/Ta薄膜 逆自旋霍尔效应 自旋整流效应 各向异性磁电阻 

分 类 号：O469[理学—凝聚态物理]