CoFe/NiFe复合自由层对自旋阀磁电阻变化率的影响  

Effects of CoFe/NiFe composite free layer on magnetoresistance change rate with spin-valve structure

作　　者：刘斌[1] 王向谦[1] 李钰瑛 卢启海[1] 谢明玲 LIU Bin;WANG Xiangqian;LI Yuying;LU Qihai;XIE Mingling(Institute of Sensor Technology,Gansu Academy of Sciences,Lanzhou 730000,China)

机构地区：[1]甘肃省科学院传感技术研究所,甘肃兰州730000

出　　处：《甘肃科学学报》2024年第1期52-57,86,共7页Journal of Gansu Sciences

基　　金：甘肃省科技计划项目(22JR5RA776,22JR5RA775);兰州市城关区科技计划项目(2022JSCX0015)。

摘　　要：研究CoFe/NiFe复合自由层对自旋阀磁电阻变化率的影响。在实验中通过固定溅射功率、时间和气流,调节靶基距(TSD)得到不同厚度及均匀性的复合自由层CoFe/NiFe薄膜,进而达到优化自旋阀结构提高其磁电阻率的目的。实验结果表明:在TSD分别为8.382 cm、8.890 cm时,制备的CoFe和NiFe单层膜性能最优,电阻标准偏差分别为1.33%、0.98%。通过磁性能综合测试平台对优化后的CoFe/NiFe复合自由层的自旋阀结构进行了测试,磁电阻变化率(MR)较优化前提高了约0.84%。该研究可为高性能自旋阀结构的制备提供参考。In this essay,the effects of CoFe/NiFe composite free layer on magnetoresistance change rate with spin-valve structure were studied.In order to optimize the spin-valve structure and improve its magnetoresistance value (MR),the CoFe/NiFe composite free layer with different thickness and uniformity were obtained by target substrate distance (TSD) during the sputtering power,sputtering time and air flow were fixed in the experiment.The results show that when the TSD were 8.382 cm and 8.890 cm respectively,the optimal monolayer films of CoFe and NiFe were obtained with resistance standard deviation to 1.33% and 0.98%,respectively.By magnetization measurements the giant magnetoresistance results show that the magnetoresistance value of spin-valve structure prepared at optimizing the CoFe/NiFe composite free layer increases by 0.84% than unoptimization free layer.The research work provides a reference for the preparation of high-performance with spin-valve structure.

关 键 词：自旋阀 CoFe/NiFe复合自由层 靶基距 磁电阻变化率 

分 类 号：O484.43[理学—固体物理]