Chemical vapor deposition synthesis of V-doped MoS_(2)  

作　　者：Yang Yang Qing-Rong Liang Chun-Li Zhu Guo-Zhong Zheng Jian Zhang Shou-Jun Zheng Yung-Chang Lin De-Zhi Zheng Jia-Dong Zhou 

机构地区：[1]School of Physics,Beijing Institute of Technology,Beijing 100081,China [2]School of Information and Electronics and Advanced Research Institute of Multidisciplinary Science,Beijing Institute of Technology,Beijing 100081,China [3]School of Physics,Shaanxi Normal University,Xi'an 710119 China [4]The Institute of Scientific and Industrial Research,Osaka University,Osaka 567-0047,Japan [5]Advanced Research Institute of Multidisciplinary Science,Beijing Institute of Technology,Beijing 100081,China

出　　处：《Rare Metals》2023年第12期3985-3992,共8页稀有金属（英文版）

基　　金：financially supported by the National Natural Science Foundation of China (Nos.62174013 and92265111);the Funding Program of Beijing Institute of Technology (Nos.3180012212214 and 3180023012204)。

摘　　要：Van der Waals coupling with different stacking configurations can significantly affect the optical and electronic properties of ultrathin two-dimensional(2D)materials,which is an effective way to tune device performance.Herein,we report a salt-assisted chemical vapor deposition method for the synthesis of bilayer V-doped MoS_(2) with 2H and 3R phases,which are demonstrated by the second harmonic generation and scanning transmission electron microscopy.Notably,the mobility of the 3R phase V-doped MoS_(2) is 6.2%higher than that of the 2H phase.Through first-principles calculations,we further reveal that this particular behavior is attributed to the stronger interlayer coupling of 3R compared to the 2H stacking configuration.This research can be further generalized to other transition metal chalcogenides and will contribute to the development of electronic devices based on 2D materials in the future.

关 键 词：Chemical vapor deposition SYNTHESIS Firstprinciples calculations 2H 3R 

分 类 号：TQ136.12[化学工程—无机化工]