硒化银薄膜-氧化锰纳米颗粒自组装薄膜电阻转变特性的研究  

Research on Resistive Switching Properties of Ag_(2)Se Thin Film-MnO Nanoparticles Self-assembled Thin Film

作　　者：罗涵琼 胡全丽 Luo Hanqiong;Hu Quanli(College of Chemistry and Materials Science,Inner Mongolia Minzu University,Tongliao 028000,China)

机构地区：[1]内蒙古民族大学化学与材料学院,内蒙古通辽028000

出　　处：《云南化工》2024年第2期37-40,共4页Yunnan Chemical Technology

基　　金：内蒙古自治区高等学校科学技术研究自然科学重点项目(项目编号:NJZZ22461);内蒙古民族大学博士启动基金(项目编号:BS456);内蒙古自治区自然科学基金青年基金项目(项目编号:2022QN02016)。

摘　　要：采用热分解法制备粒径约为30 nm的单分散氧化锰纳米颗粒,然后通过浸渍提拉法将这些纳米颗粒在铂底电极上自组装成氧化锰薄膜,接着利用热蒸镀工艺沉积硒化银薄膜,最后利用磁控溅射工艺沉积钛顶电极,获得具有Ti/Ag_(2)Se/MnO/Pt结构的阻变存储器。该器件表现出双极性电阻转变特性,并且具有良好的循环特性和数据保持特性,表明Ti/Ag_(2)Se/MnO/Pt阻变存储器在非易失性存储器件中具有潜在的应用前景。Monodisperse manganese oxide nanoparticles with particle size of about 30 nm were chemically synthesized via thermal decomposition.A close-packed nanoparticle monolayer was formed on a Pt bottom electrode via dip-coating and annealing.As_(2)Se/MnO heterostructures with a Ti top electrode and a Pt bottom electrode were fabricated.The Ti/Ag_(2)Se/MnO/Pt devices presented stable bipolar resistive switching behaviors,with low voltage operation and good endurance and retention properties.It proves the potential application of Ti/Ag_(2)Se/MnO/Pt devices for non-volatile resistive switching memory devices.

关 键 词：硒化银 氧化锰 薄膜 阻变存储器 

分 类 号：O611.6[理学—无机化学]