Low-thermal-budget synthesis of monolayer MoS_(2)  

作　　者：Zongmeng Yang Shibo Fang Jing Lu 

机构地区：[1]State Key Laboratory for Mesoscopic Physics and School of Physics,Peking University,Beijing 100871,China [2]Collaborative Innovation Center of Quantum Matter,Beijing 100871,China [3]Beijing Key Laboratory for Magnetoelectric Materials and Devices(BKL-MEMD),Peking University,Beijing 100871,China [4]Peking University Yangtze Delta Institute of Optoelectronics,Nantong 226010,China [5]Key Laboratory for the Physics and Chemistry of Nanodevices,Peking University,Beijing 100871,China [6]Beijing Key Laboratory of Quantum Devices,Peking University,Beijing 100871,China

出　　处：《Science China Materials》2024年第1期372-374,共3页中国科学（材料科学）（英文版）

摘　　要：Two-dimensional(2D)materials,such as MoS_(2),have been considered as a competitive coordinate for future electronics due to their excellent electrostatics and high mobility[1-3].Moreover,the potential integration of 2D materials with silicon circuits can present increased density and multifunction in future heterogeneously integrated circuits[4,5].However,the high thermal-budget during MoS_(2) synthesis exceeds the temperature requirement of direct integration with Si in the back-end-of-line(BEOL)fabrication process[6-8].

关 键 词：SYNTHESIS THERMAL MoS_(2) 

分 类 号：TQ136.12[化学工程—无机化工]