Mobile-ionic FETs with ultra-scaled amorphous dielectric achieving ferroelectric behaviors and sub-kT/q swing with temperature down to 77 K  

作　　者：Huan LIU Qiyu YANG Chengji JIN Jiajia CHEN Lulu CHOU Xiao YU Yan LIU Genquan HAN 

机构地区：[1]Research Center for Intelligent Chips,Zhejiang Lab,Hangzhou 311121,China [2]School of Microelectronics,Xidian University,Xi’an 710071,China

出　　处：《Science China(Information Sciences)》2024年第1期308-309,共2页中国科学（信息科学）（英文版）

基　　金：supported by National Key Research and Development Project(Grant No.2018YFB2200500);National Natural Science Foundation of China(Grant Nos.62025402,62090033,91964202);Major Scientific Research Project of Zhejiang Lab(Grant No.2021MD0AC01);Zhejiang Province Key R&D Programs(Grant Nos.2022C01232,2021C05004)。

摘　　要：The steep subthreshold swing(SS)could be achieved in negative capacitance field-effect transistors(NCFET)to reduce power dissipation in modern electronics.Polycrystalline Hf O2-based ferroelectric materials have attracted great interest due to their better thickness scalability and CMOS process compatibility[1].

关 键 词：FERROELECTRIC DIELECTRIC AMORPHOUS 

分 类 号：TN386[电子电信—物理电子学]