一种具有高能量分辨率Al_(2)O_(3)钝化结区的PIN探测器  

Design of the Al_(2)O_(3) Passive Junction PIN Detector with High Energy Resolution

作　　者：孙熙晨 林旭梅 SUN Xichen;LIN Xumei(Government Affairs Security Center of the CPC Shandong Province,Jinan 250001,CHN;School of Information and Control Engineering,Qingdao University of Technology,Qingdao 266520,CHN)

机构地区：[1]中共山东省委机关政务保障中心,济南250001 [2]青岛理工大学信息与控制工程学院,山东青岛266520

出　　处：《半导体光电》2023年第6期857-862,共6页Semiconductor Optoelectronics

摘　　要：提出了一种Al_(2)O_(3)钝化结区的PIN探测器,与传统PIN探测器不同的是,在器件正面的pn结和背面的高低结处沉积了10 nm厚的Al_(2)O_(3)薄膜。经TCAD仿真结果表明,该探测器具有更低的漏电流和保护环处的电子电流密度,能对高能粒子射线入射产生良好的响应。设计了两种探测器的制备步骤并制备了器件,通过薄膜少子寿命的表征、器件的暗态I-V测试和^(241)Am元素能谱测试对其进行了评估。测试结果表明,与传统的PIN探测器相比,Al_(2)O_(3)钝化结区的PIN探测器的少子寿命提升至1 061μs,漏电流降低至5 nA,能量分辨率提升至521 eV,表现出更好的探测性能。The Al_(2)O_(3) passive junction PIN detector is proposed.Different from the traditional PIN detector,a 10nm Al_(2)O_(3) film is deposited at the PN junction on the front of the device and the high and low junctions on the back.TCAD simulation results show that the detector has lower leakage current and electron current density at the guard ring,and can produce good response to the incidence of high-energy particle rays.Subsequently,the fabrication steps of the two detectors were designed and the devices were prepared,which were evaluated through the characterization of the minority carrier lifetime of the thin film,the dark state IV test of the device and the 241Am elemental energy spectrum test.The results show that compared with the traditional PIN detector,the minority carrier lifetime of the Al_(2)O_(3) passive junction PIN detector is increased to 1061μs,the leakage current is reduced to 5nA,and the energy resolution is increased to 521eV,showing better detection performance.

关 键 词：Al_(2)O_(3)钝化层 PIN探测器 TCAD仿真 暗态漏电流 能量分辨率 

分 类 号：TL814[核科学技术—核技术及应用]