高性能ZnSnO∶Li/ZnSnO双有源层TFT电学性能的研究  

Study on the Electrical Properties of High-performance ZnSnO∶Li/ZnSnO Dual Active Layer TFT

作　　者：高瑞妍 郭亮[1,3] 王冲 王超[1,2] 杨帆 初学峰[1,2] 迟耀丹[1,2] 杨小天[1,4] GAO Ruiyan;GUO Liang;WANG Chong;WANG Chao;YANG Fan;CHU Xuefeng;CHI Yaodan;YANG Xiaotian(Key Lab.of Comprehensive Energy Conservation of Cold Land Buildings,Ministry of Education,Jilin Jianzhu University,Changchun 130118,CHN;School of Electrical Engin.and Computer,Jilin Jianzhu University,Changchun 130118,CHN;Dept.of Basic Science,Jilin Jianzhu University,Changchun 130118,CHN;Jilin Normal University,Siping 136000,CHN)

机构地区：[1]吉林建筑大学寒地建筑综合节能教育部重点实验室,长春130118 [2]吉林建筑大学电气与计算机学院,长春130118 [3]吉林建筑大学基础科学系,长春130118 [4]吉林师范大学,吉林四平136000

出　　处：《半导体光电》2023年第6期907-912,共6页Semiconductor Optoelectronics

基　　金：吉林省科技厅项目(YDZJ202301ZYTS489);吉林省自然科学基金项目(20200201177JC)。

摘　　要：双有源层以迁移率高、开关比高、大面积均匀性好等优点成为近年研究热点。采用射频磁控溅射方法,制备了ZnSnO∶Li/ZnSnO薄膜晶体管(TFT),对其电学特性进行了测试,并研究了器件迁移率提高的原因及其内在的微观机制。研究发现,ZTO∶Li/ZTO TFT表现出了良好的电学特性,其场效应迁移为率为13.98 cm^(2)/(V·s),亚阈值摆幅为0.84 V/dec,开关比为1.13×10^(9)。通过XPS对其薄膜进行分析发现,Li的引入导致薄膜中氧和金属结合键的浓度增加,氧空位浓度减少,从而使得TFT的迁移率增大,开关比增大,亚阈值摆幅减小。The dual active layer has become a research hotspot in recent years due to its high mobility,high switching ratio,and strong uniformity in large area.In this paper,ZnSnO∶Li/ZnSnO thin-film transistors were fabricated by RF magnetron sputtering,and their electrical properties were tested,and the reasons for the increase of device mobility and its internal microscopic mechanism were studied.It is found that the ZTO∶Li/ZTO TFT exhibits good electrical characteristics,with a field-effect migration rate of 13.98cm^(2)/(V·s),a subthreshold swing of 0.84V/dec,and a switching ratio of 1.13×10^(9).Through the analysis of the thin film by XPS,it was found that the introduction of Li led to an increase in the concentration of oxygenmetal binding bonds and a decrease in the concentration of oxygen vacancies in the film,which in turn increased the mobility of TFT,increased the switching ratio,and decreased the subthreshold swing.

关 键 词：薄膜晶体管 双有源层 Li掺杂 锌锡氧化物 

分 类 号：TN321.5[电子电信—物理电子学]