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作 者:黄坚明 束开翔 卜娜布其 闫勇 郑涛 杨孟孟 郑照强 霍能杰 李京波 高伟 Jianming Huang;Kaixiang Shu;Nabuqi Bu;Yong Yan;Tao Zheng;Mengmeng Yang;Zhaoqiang Zheng;Nengjie Huo;Jingbo Li;Wei Gao(Guangdong Provincial Key Laboratory of Chip and Integration Technology,School of Semiconductor Science and Technology,South China Normal University,Foshan 528225,China;Institut de minéralogie,de physique des matériaux et de cosmochimie,Sorbonne Université,Paris 75005,France;School of Physics,Henan Normal University,Xinxiang 453007,China;School of Materials and Energy,Guangdong University of Technology,Guangzhou 510006,China;College of Optical Science and Engineering,Zhejiang University,Hangzhou 310027,China)
机构地区:[1]Guangdong Provincial Key Laboratory of Chip and Integration Technology,School of Semiconductor Science and Technology,South China Normal University,Foshan 528225,China [2]Institut de minéralogie,de physique des matériaux et de cosmochimie,Sorbonne Université,Paris 75005,France [3]School of Physics,Henan Normal University,Xinxiang 453007,China [4]School of Materials and Energy,Guangdong University of Technology,Guangzhou 510006,China [5]College of Optical Science and Engineering,Zhejiang University,Hangzhou 310027,China
出 处:《Science China Materials》2023年第12期4711-4722,共12页中国科学(材料科学)(英文版)
基 金:supported by the National Natural Science Foundation of China (62004071, 62074060, and 62175040);the Science and Technology Program of Guangzhou (202103030001);“The Pearl River Talent Recruitment Program” (2019ZT08X639)
摘 要:基于二维材料范德华异质结的自驱动光电探测器是逻辑光电子器件和智能图像传感器的重要组成部分.本文通过机械剥离和干法转移制备了一种底部Au接触的PtSe_(2)/WSe_(2)/Au非对称肖特基光电二极管.栅极可调的Au/WSe_(2)肖特基势垒大小、弱费米钉扎效应、高半金属PtSe_(2)导电率以及良好的PtSe_(2)/WSe_(2)层间耦合效应使得该二极管产生极性可重构现象,可实现栅极可调正负整流行为,且整流比变化范围在10−2到104之间,达到6个量级.我们利用此特性验证了半波逻辑整流器功能.此外,此自驱动器件的最大光响应度达316 mA W^(−1),最大光开关比达105,光电转换效率为4.62%,响应时间仅为830/950μs.光电流微区扫描结果表明,器件的光电流主要分布在Au/WSe_(2)界面边缘,证实该器件为非对称肖特基光电二极管.该器件还实现了高分辨率的可见光单点成像.上述研究结果表明,本工作为制备高性能半波整流器、超快自驱动光电探测器和高分辨图像传感器提供了一种简便有效的策略.Van der Waals heterojunction-based self-powered photodetectors(SPPDs)based on two-dimensional materials play an important role in the fields of logic optoelectronics and intelligent image sensors.Herein,we fabricated a PtSe_(2)/WSe_(2)/Au asymmetric Schottky photodiode with a bottom-contact structure via mechanical exfoliation and dry transfer.Owing to the merits of gate-tunable Schottky barrier height,avoidance of the Fermi pinning effect of Au/WSe_(2),high conductivity of semi-metallic PtSe_(2),and excellent interlayer coupling effect between PtSe_(2)and WSe_(2),the diode features polar reconfiguration which induces gate-tunable positive and negative rectifying behavior with a rectification ratio ranging from 10−2 to 104,verifying the potential as a half-wave logic rectifier.In addition,the self-powered device exhibits a maximum photoresponsivity of 316 mA W^(−1),a Ilight/Idark ratio of 105,a photoelectric conversion efficiency of 4.62%,and a fast response speed.The scanning photocurrent mapping reveals that the photocurrent is primarily distributed at the edge of the Au/WSe_(2)interface,indicating that it is an asymmetric Schottky photodiode.Finally,a high-resolution visible-light single-pixel imaging measurement is achieved.This study offers a straightforward effective approach for producing high-performance half-wave rectifiers,ultrafast SPPDs,and high-resolution image sensors.
关 键 词:logic rectifier WSe_(2) PtSe_(2) asymmetric Schottky heterojunction PHOTODIODE
分 类 号:TM461[电气工程—电器] TN36[电子电信—物理电子学]
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