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作 者:温奕超 唐斌[1] 张树人[1] WEN Yichao;TANG Bin;ZHANG Shuren(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu611731,China)
机构地区:[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都611731
出 处:《电子元件与材料》2023年第11期1315-1319,共5页Electronic Components And Materials
基 金:国家自然科学基金(62171080)。
摘 要:针对绝缘材料在高电压绝缘系统中易发生沿面闪络现象的问题,设计了一种通过体掺杂来提高氧化铝陶瓷闪络电压的方案。以95%Al_(2)O_(3)陶瓷为基料,掺杂不同含量的Cr_(2)O_(3)-MnCO3,在1510~1590℃的烧结温度下制备铬锰掺杂的氧化铝陶瓷,并研究了铬锰掺杂对该绝缘陶瓷烧结性能和真空绝缘性能的影响。结果表明,Cr_(2)O_(3)-MnCO3的掺入促进了氧化铝陶瓷的烧结,新生成的MnAl2O4能降低陶瓷整体的电阻率,同时Cr+的掺入降低了陶瓷整体的二次电子发射系数。在保持95%氧化铝陶瓷绝缘性能的前提下,Cr_(2)O_(3)-MnCO3的掺入能有效提高陶瓷的沿面闪络电压,其中老练电压可达109 kV。Aimng at the problem of surface flashover phenomenon that occurs frequently in the insulation materials in high-voltage insulation systems,a scheme was designed to increase the flashover voltage of the alumina ceramics through bulk doping.Using 95%Al_(2)O_(3) ceramics as the base material,Cr_(2)O_(3)-MnCO3 doped alumina ceramics with different contents were prepared and sintered at temperatures ranging from 1510℃to 1590℃.The effects of Cr_(2)O_(3)-MnCO3 doping on the sintering and vacuum insulation properties of the insulating ceramics were studied.The results show that the addition of Cr_(2)O_(3)-MnCO3 promotes the sintering of the alumina ceramics.The as formed MnAl2O4 can reduce the overall resistivity of the ceramics,and the addition of Cr+reduces the overall secondary electrons emission coefficient of the ceramics.On the premise of maintaining 95%insulation performance of the alumina ceramics,the addition of Cr2 O3-MnCO3 can effectively improve the surface flashover voltage of the ceramics,with a conditioned-flashover voltage as high as 109 kV.
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