B掺杂Co基氧化物/氢氧化物电极材料的制备及其赝电容性能  

Preparation and pseudo-capacitance performance of B-doped Co-based oxide/hydroxide electrode materials

作　　者：张轲 张坤柔 韩宇珠 曹中秋 王艳 ZHANG Ke;ZHANG Kunrou;HAN Yuzhu;CAO Zhongqiu;WANG Yan(College of Chemistry and Chemical Engineering,Shenyang Normal University,Shenyang 110034,China)

机构地区：[1]沈阳师范大学化学化工学院,沈阳110034

出　　处：《沈阳师范大学学报（自然科学版）》2023年第6期482-487,共6页Journal of Shenyang Normal University:Natural Science Edition

基　　金：国家自然科学基金资助项目(51501118)。

摘　　要：采用先化学镀再电化学氧化的工艺在薄铜片基体表面制备出了掺杂B和未掺杂B的2种Co基氧化物/氢氧化物电极材料,并对其进行了结构表征和电化学性能测试。研究结果表明,2种电极材料表面相均由Co3O4和Co(OH)3构成,掺杂B的电极材料中B以氧化物的形式掺杂其中,掺杂量可达2.6wt%。电化学性能测试表明,2种电极材料均具有良好的可逆性,B掺杂后其比电容较未掺杂时提高了至少2.5倍,经历10 000次充放电循环实验后,掺杂B的电极材料的比电容保有率从98%提高到106%,说明B的掺杂有利于提高电极材料的比电容性能和电化学性能;阻抗谱实验表明,B的掺杂降低了电极材料表面电化学反应的电荷传递电阻,从而提高了其比电容。In this paper,two kinds of Co-based oxide/hydroxide electrode materials,B-doped and B-undoped,were prepared on the surface of thin copper sheet substrate by the process of electroless followed by electrochemical oxidation,and were structurally characterized and electrochemically tested.The results show that the surface phases of both electrode materials are composed of Co 3O 4 and Co(OH)3,and the B-doped electrode material is doped with B in the form of oxide,and the doping amount can reach 2.6 wt%.Electrochemical performance tests showed that both electrode materials have good reversibility,and its specific capacitance increased at least 2.5 times after B-doping compared with that when it was not doped,and the specific capacitance retention of B-doped electrode materials increased from 98%to 106%after 10000 cyclic charge/discharge experiments,which indicates that B-doping is beneficial to the specific capacitance and electrochemical stability of the electrode materials.The impedance spectra reveal that B-doping reduces the charge transfer resistance of the electrochemical reaction on the surface of the electrode material and thus increases its specific capacitance.

关 键 词：B掺杂 化学镀 电化学氧化 Co基电极材料 赝电容 

分 类 号：TM53[电气工程—电器]