应用于WiFi6的新型高线性度功率放大器设计  

A Novel Design of High Linearity Power Amplifier Used in WiFi6

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作  者:姚凤薇 焦凌彬 YAO Fengwei;JIAO Lingbin(School of Communication and Information Engineering,Shanghai Technical Institute of Electronics and Information,Shanghai 201411,China;School of Electronic Information,Shanghai DianJi University,Shanghai 201306,China)

机构地区:[1]上海电子信息职业技术学院通信与信息工程学院,上海201411 [2]上海电机学院电子信息学院,上海201306

出  处:《微波学报》2024年第1期93-98,共6页Journal of Microwaves

基  金:上海自然基金(17ZR1411100);上海电子信息职业技术学院高层次科研启动资助项目(GCC2023027)。

摘  要:针对WiFi 6的设备需求,设计了一款工作在5.15 GHz~5.85 GHz的高线性度砷化镓异质结双极型晶体管射频功率放大器。为了保证大信号和高温下功率管静态工作点的稳定性,采用了一种新型有源自适应偏置电路。对射频功率检测电路进行了设计和改进,有效降低了射频系统的功耗。针对各次谐波分量产生的影响,对输出匹配网络进行了优化。仿真结果表明:该射频功率放大器芯片小信号增益达到了32.6 dB;在中心频率5.5 GHz时1 dB压缩点功率为30.4 dBm,功率附加效率超过27.9%;输出功率为26 dBm时,三阶交调失真低于-40 dBc。实测数据表明:小信号增益大于31.4 dB;5.5 GHz时1 dB压缩点功率为29.06 dBm;输出功率为26 dBm时,三阶交调失真低于-30 dBc。当输出功率为20 dBm时,二次三次谐波抑制到-30 dBc和-45 dBc。A high linearity gallium arsenide heterojuncion bipolar transistor ratio-frequency power amplifier operating at 5.15 GHz~5.85 GHz is designed to meet the equipment requirements of WiFi 6.In order to ensure the stability of the static operating point of the power transistor under high signal and high temperature,a new active adaptive bias circuit is adopted.A novel ratio-frequency power detection circuit is designed and improved to reduce the power consumption of the ratio-frequency system.The output matching network is optimized according to the influence of each harmonic component.The simulation results show that the small signal gain of the radio-frequency power amplifier chip reaches 32.6 dB.At 5.5 GHz,1 dB compression point power is 30.4 dBm,the additional power efficiency exceeds 27.9%.When the output power is 26 dBm,the third-order intermodulation distortion is lower than-40 dBc.The measured data shows that the small signal gain is greater than 31.4 dB.At 5.5 GHz,1 dB compression point power is 29.06 dBm.When the output power is 26 dBm,third-order intermodulation distortion is lower than-30 dBc.The second and third harmonic component are suppressed to-30 dBc and-45 dBc respectively with 20 dBm output power.

关 键 词:砷化镓异质结双极型晶体管 偏置电路 功率检测电路 匹配网络 高线性度 

分 类 号:TN454[电子电信—微电子学与固体电子学] TN722

 

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