硅基集成光开关阵列的高速驱动控制电路设计  

Design of high-speed driving control circuit for integrated silicon photonic switch matrix

作　　者：张毅远 武雅婷 米光灿 黄莹 储涛 ZHANG Yiyuan;WU Yating;MI Guangcan;HUANG Ying;CHU Tao(College of Information Science and Electronic Engineering,Zhejiang University,Hangzhou 310027,China;Huawei Technologies Limited Company,Dongguan 523145,China)

机构地区：[1]浙江大学信息与电子工程学院,浙江杭州310027 [2]华为技术有限公司,广东东莞523145

出　　处：《浙江大学学报（工学版）》2024年第2期325-333,共9页Journal of Zhejiang University：Engineering Science

基　　金：国家自然科学基金资助项目(62035001)。

摘　　要：通过分析光开关单元的物理结构,提出等效电学模型,用于模拟光开关单元的瞬态响应.基于该模型,针对光开关阵列设计高速驱动控制电路,结合仿真探究电压尖峰对光开关单元瞬态响应的影响.系统测试结果表明,驱动电路施加的电压信号的上升/下降时间为1.7/1.6 ns,能够满足高速光开关纳秒级切换速度的需求.在该驱动电路的配合下,光开关阵列的切换时间为2.1~5.9 ns,实现了较先进的高速光交换系统.An equivalent electrical model was proposed for simulating the transient responses of a photonic switch cell by analyzing its physical structure.A high-speed driving control circuit was designed for a photonic switch matrix based on the model,and the effect of voltage spikes on the transient response of photonic switch cell was analyzed by simulation.The test results show that the rise/fall time of the signal supplied by the driving circuit are 1.7/1.6 ns,which meets the requirements for nanosecond-level switching of high-speed photonic switches.The switching time of the photonic switch matrix reaches 2.1-5.9 ns with the assistance of the driving control circuits,realizing a high-speed optical switching system.

关 键 词：光通信 光互连 硅基光子学 硅基光开关 驱动控制电路 

分 类 号：TN41[电子电信—微电子学与固体电子学]