ITO-free silicon-integrated perovskite electrochemical cell for light-emission and light-detection  

作　　者：Maria Baeva Dmitry Gets Artem Polushkin Aleksandr Vorobyov Aleksandr Goltaev Vladimir Neplokh Alexey Mozharov Dmitry VKrasnikov Albert GNasibulin Ivan Mukhin Sergey Makarov 

机构地区：[1]Alferov University,Khlopina 8/3,St.Petersburg 194021,Russia [2]Department of Physics and Engineering,ITMO University,Lomonosova 9,St.Petersburg 197101,Russia [3] Institute of Automation and Control Processes(IACP),Far Eastern Branch of Russian Academy of Sciences,Ulitsa Radio 5,Vladivostok 690041,Primorsky Krai,Russia [4]Peter the Great St.Petersburg Polytechnic University,Polytechnicheskaya 29,St.Petersburg 195251,Russia [5]Skolkovo Institute of Science and Technology,Nobel 3,Moscow 121205,Russia [6]Qingdao Innovation and Development Center,Harbin Engineering University,Qingdao 266000,China.

出　　处：《Opto-Electronic Advances》2023年第9期45-58,共14页光电进展（英文）

基　　金：M.Baeva,A.Vorobyov,V.Neplokh acknowledge the Russian Science Foundation No.22-79-10286(https://rscf.ru/project/22-79-10286/)for supporting silicon substrate processing.D.Gets,A;Polushkin and S.Makarov acknowledge the Ministry of Science and Higher Education of the Russian Federation(Project 075-15-2021-589)for supporting perovskite synthesis;A.G.Nasibulin and D.V.Krasnikov acknowledge the Russian Science Foundation(grant No.20-73-10256)for supporting synthesis of SWCNTs.

摘　　要：Halide perovskite light-emitting electrochemical cells are a novel type of the perovskite optoelectronic devices that differs from the perovskite light-emitting diodes by a simple monolayered architecture.Here,we develop a perovskite electrochemical cell both for light emission and detection,where the active layer consists of a composite material made of halide perovskite microcrystals,polymer support matrix,and added mobile ions.The perovskite electrochemical cell of CsPbBr3:PEO:LiTFSI composition,emitting light at the wavelength of 523 nm,yields the luminance more than 7000 cd/m2 and electroluminescence efficiency of 4.3 lm/W.The device fabricated on a silicon substrate with transparent single-walled carbon nanotube film as a top contact exhibits 40%lower Joule heating compared to the perovskite optoelectronic devices fabricated on conventional ITO/glass substrates.Moreover,the device operates as a photodetector with a sensitivity up to 0.75 A/W,specific detectivity of 8.56×1011 Jones,and linear dynamic range of 48 dB.The technological potential of such a device is proven by demonstration of 24-pixel indicator display as well as by successful device miniaturization by creation of electroluminescent images with the smallest features less than 50μm.

关 键 词：composite inorganic halide perovskite silicon single walled carbon nanotubes light-emitting electrochemical cell PHOTODETECTOR indicator display 

分 类 号：TB3[一般工业技术—材料科学与工程]