基于掺钪氮化铝FBAR的滤波器设计研究  

Design and Research of Filter Based on Scandium Aluminum Nitride-based FBAR

作　　者：黄靓文 吕世涛 孙海燕[1,2] 赵继聪 陶玉娟 HUANG Liangwen;LV Shitao;SUN Haiyan;ZHAO Jicong;TAO Yujuan(School of Information and Science Technology,Nantong University,Nantong,Jiangsu,226019,CHN;Jiangsu Key Laboratory of ASIC Design,Nantong University,Nantong,Jiangsu,226019,CHN;Tongfu Microelectronics Co.,Ltd.,Nantong,Jiangsu,226006,CHN)

机构地区：[1]南通大学信息与科学技术学院,江苏南通226019 [2]南通大学专用集成电路设计重点实验室,江苏南通226019 [3]通富微电子股份有限公司,江苏南通226006

出　　处：《固体电子学研究与进展》2023年第6期503-509,共7页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(61974077)。

摘　　要：设计了一款工作在2.11~2.18 GHz频段的薄膜体声波滤波器。基于有限元仿真研究了掺钪氮化铝(AlScN)的薄膜体声波谐振器,并分析了掺钪对谐振器性能的影响。提出了边缘凸起结构的优化设计方案,改善了谐振器的有效机电耦合系数和品质因数。利用Modified Butterworth-van Dyke(MBVD)等效电学模型对FBAR滤波器进行仿真研究,并将所设计的7层内置螺旋电感与滤波器电路进行协同仿真,优化后的FBAR滤波器在2.11~2.18 GHz频段的插入损耗<2 dB,带外抑制>40 dB。A thin⁃film bulk acoustic resonator filter operating in the 2.11-2.18 GHz frequency band was designed in this paper.Based on finite element simulation,a thin film bulk acoustic resona⁃tor doped with scandium aluminum nitride was studied,and the effect of scandium doping on the per⁃formance of the resonator was analyzed.An optimized design scheme for electrode frame structure was proposed,which improves the effective electro-mechanical coupling coefficient and the quality factor values of the resonator.This article used the modified Butterworth-van Dyke(MBVD)electrical mod⁃el to simulate and study the FBAR filter.Then,the designed 7-layer built-in spiral inductors and filter circuit were collaborative simulated.The optimized FBAR filter has an insertion loss of<2 dB and an out of band suppression of>40 dB in the 2.11-2.18 GHz frequency band.

关 键 词：薄膜体声波谐振器 掺钪氮化铝 MBVD等效电学模型 多层螺旋电感 

分 类 号：TN4[电子电信—微电子学与固体电子学] TN713